Cree Gmbh

Wolfspeed, Inc.

Arkansas Power Electronics International, Inc.

Marcelo Schupbach

Adam Barkley

Mrinal Kanti Das

Henry Lin

John Williams Palmour

Sei-Hyung Ryu

Brice McPherson

Scott Thomas Allen

Ty McNutt

Jared Hornberger

Alex Lostetter

Robert Shaw

XueChao Liu

Brad Reese

Jack Bourne

Eric Cole

Leonard Schaper

A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

High speed, efficient SiC power module

High speed, efficient sic power module

A vertical FET includes a silicon carbide substrate having a top surface and a bottom surface opposite the top surface; a drain/collector contact on the bottom surface of the silicon carbide substrate; and an epitaxial structure on the top surface of the silicon carbide substrate having formed therein a first source/emitter implant. A gate dielectric is provided on a portion of the epitaxial structure. First source/emitter contact segments are spaced apart from each other and on the first source/emitter implant. A first elongated gate contact and a second elongated gate contact are on the gate dielectric and positioned such that the first source/emitter implant is below and between the first elongated gate contact and the second elongated gate contact. Inter-gate plates extend from at least one of the first elongated gate contact and the second elongated gate contact into spaces formed between the first source/emitter contact segments.

Vertical FET structure

A power converter module includes a baseplate, a substrate on the baseplate, one or more silicon carbide switching components on the substrate, and a housing over the baseplate, the substrate, and the one or more silicon carbide switching components. The housing has a footprint less than 25 cm. Including a baseplate in a power converter module with a footprint less than 25 cmruns counter to accepted design principles for silicon and silicon carbide-based power converter modules, but may improve performance of the power converter module and/or decrease the cost of the power converter module.

A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

High current, low switching loss SiC power module

AC to DC power electronic converter circuitry includes isolated converter circuitry and control circuitry coupled to the isolated converter circuitry. The isolated converter circuitry includes one or more wide bandgap switching components. The control circuitry is configured to drive at least one of the wide bandgap switching components such that the power electronic converter circuitry is configured to generate a DC output with an output power greater than 100W at an efficiency greater than 92%. Using wide bandgap components in the isolated converter circuitry allows the power electronic converter circuitry to achieve a high efficiency and high power density.

High power density, high efficiency power electronic converter

A four quadrant power module with lower substrate parallel power paths and upper substrate equidistant clock tree timing utilizing parallel leg construction in a captive fastener power module housing.

High temperature equalized electrical parasitic power packaging method for many paralleled semiconductor power devices

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Raleigh, NC, United States of America

Marcelo Schupbach