Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Marcelo Goffman

Vincent Derycke

Jean-Philippe Bourgoin

Nicolas Chimot

Julien Borghetti

Stéphane Auvray

Pascale Mordant

Arianna Filoramo

A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

Carbon nanotube field effect transistor

The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R, Rand Rare chosen in the group comprising (H, F, Cl, Br, I) with at least one of R, Rand Rbeing different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor. 

Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it

The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

Optically-configurable nanotube or nanowire semiconductor device

Growing community of inventors

Palaiseau, France

Marcelo Goffman