U.S. Philips Corporation

Marcellinus B Kemp

Teunis Van Dongen

Pieter I Kuindersma

Gerardus L Van Der Hofstad

A semiconductor diode laser (1) with a monitor diode (2) includes a semiconductor body with a substrate (4) and a superimposed layer structure (5) having an active layer (6) and a pn junction (7) with which radiation (24) can be generated. The monitor diode (2) is separated from the diode laser by a groove (10) which extends into the substrate (4) and of which one of the walls forms an end face of the laser. The groove (10) and the monitor diode (2) are present at the side where the main radiation beam (24) emerges, while the active layer (6) extends over at most only a small portion, preferably at most 20%, of the length of the monitor diode (2). The length in the monitor diode over which absorption takes place is preferably smaller than the absorption length for the emitted laser radiation.

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Veldhoven, Netherlands

Marcellinus B Kemp