Koninklijke Philips Corporation N.v.

Marcel Mulder

Ronald Dekker

Johannes Wilhelmus Weekamp

Johan Hendrik Klootwijk

Peter Dirksen

Ruediger Mauczok

Bout Marcelis

Koray Karakaya

Elisabeth M L Moonen

Rainer Hilbig

Achim Gerhard Rolf Koerber

Arjen Van Der Horst

Vincent Adrianus Henneken

Nico Maris Adriaan De Wild

Marcus Cornelis Louwerse

Pascal De Graaf

Adriaan Leeuwestein

Cornelius Antonius Van Den Heuvel

Cornelius Antonius Van Den Huevel

Marcelis Bout

The present invention provides a system () for humidification of a pressurized flow of breathable gas delivered to a patient, the system comprising; a ventilator () for generating a pressurized flow of breathable gas; a patient circuit () in fluid communication with the ventilator and connectable to the respiratory system of a patient; and an aerosol generator (). The patient circuit defines an internal space () for transporting the flow of breathable gas which internal space accommodates the outflow opening () of the aerosol generator. This enables to prevent so-called rainout and a relatively light weight portable system. The invention also relates to an insert () that is connectable to the patient circuit and that accommodates the aerosol generator.

System for humidification of a pressurized flow of breathable gas delivered to a patient

The present invention relates to an ultrasound transducer device comprising at least one cMUT cell () for transmitting and/or receiving ultrasound waves, the cMUT cell () comprising a cell membrane () and a cavity () underneath the cell membrane. The device further comprises a substrate () having a first side () and a second side (), the at least one cMUT cell () arranged on the first side () of the substrate (). The substrate () comprises a substrate base layer () and a plurality of adjacent trenches () extending into the substrate () in a direction orthogonal to the substrate sides (), wherein spacers () are each formed between adjacent trenches (). The substrate () further comprises a connecting cavity () which connects the trenches () and which extends in a direction parallel to the substrate sides (), the trenches () and the connecting cavity () together forming a substrate cavity () in the substrate (). The substrate () further comprises a substrate membrane () covering the substrate cavity (). The substrate cavity () is located in a region of the substrate () underneath the cMUT cell (). The present invention further relates to a method of manufacturing such ultrasound transducer device.

Ultrasound transducer device and method of manufacturing the same

The present invention relates to an electronic circuit arrangement () comprising: a substrate () having a first surface () and a second surface (), an electronic circuit, an electrical connection part () for providing an electrical connection to the electronic circuit and being arranged on the first surface (), and at least one electrical wire (). The electrical wire () comprises at least one conductive core () and an isolation () surrounding the conductive core (). An end portion () of the electrical wire () is an isolation-free portion for allowing access to the conductive core (), wherein the end portion () of the electrical wire () is connected to the electrical connection part (). At least one through-hole () extending from the first surface () to the second surface () is provided in the substrate (), wherein the electrical wire () is arranged through the through-hole ().

Electronic circuit arrangement and method of manufacturing the same

Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode () on a substrate () and a second electrode () embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity () formed by the removal of a sacrificial material () in between the first electrode and the membrane, the method comprising forming a membrane portion () on the second electrode and a further membrane portion () extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.

CMUT device manufacturing method, CMUT device and apparatus

A device for detecting a concentration of a substance in a fluid sample includes a substrate; an insulating layer arranged on the substrate; and a plurality of individually electrically addressable semiconducting nanowires arranged on the insulating layer. Each one of the plurality of nanowires is covered by an insulating material and arranged for sensing of the substance through an electrical characteristic of the nanowire. The device further includes a sample compartment for providing the fluid sample in contact with each of the plurality of nanowires. For each of the plurality of nanowires, at least one of the cross sectional dimension, the insulator thickness and the type of insulating material is selected such that each of the nanowires has a different detection range, and such that the dynamic range of the device is higher than the dynamic range of each of the individual nanowires.

Wide dynamic range fluid sensor based on nanowire platform

The present invention relates to a method of manufacturing a capacitive micro-machined transducer (), in particular a CMUT, the method comprising depositing a first electrode layer () on a substrate (), depositing a first dielectric film () on the first electrode layer (), depositing a sacrificial layer () on the first dielectric film (), the sacrificial layer () being removable for forming a cavity () of the transducer, depositing a second dielectric film () on the sacrificial layer (), and depositing a second electrode layer () on the second dielectric film (), wherein the first dielectric film () and/or the second dielectric film () comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (), in particular a CMUT, manufactured by such method.

Capacitive micro-machined transducer and method of manufacturing the same

The present invention relates to a method of manufacturing a capacitive micro- machined transducer (), in particular a CMUT, the method comprising depositing a first electrode layer () on a substrate (), depositing a first dielectric film () on the first electrode layer (), depositing a sacrificial layer () on the first dielectric film (), the sacrificial layer () being removable for forming a cavity () of the transducer, depositing a second dielectric film () on the sacrificial layer (), depositing a second electrode layer () on the second dielectric film (), and patterning at least one of the deposited layers and films (), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (), in particular a CMUT, manufactured by such method.

The present invention relates to an ultrasound transducer device comprising at least one cMUT cell () for transmitting and/or receiving ultrasound waves, the cMUT cell () comprising a cell membrane () and a cavity () underneath the cell membrane. The device further comprises a substrate () having a first side () and a second side (), the at least one cMUT cell () arranged on the first side () of the substrate (). The substrate () comprises a substrate base layer () and a plurality of adjacent trenches () extending into the substrate () in a direction orthogonal to the substratesides (), wherein spacers () are each formed between adjacent trenches (). The substrate () further comprises a connecting cavity () which connects the trenches () and which extends in a direction parallel to the substrate sides (), the trenches () and the connecting cavity () together forming a substrate cavity () in the substrate (). The substrate () further comprises a substrate membrane () covering the substrate cavity (). The substrate cavity () is located in a region of the substrate () underneath the cMUT cell (). The present invention further relates to a method of manufacturing such ultrasound transducer device.

The present invention relates to a method of manufacturing a capacitive micro-machined transducer (), in particular a CMUT, the method comprising depositing a first electrode layer () on a substrate (), depositing a first dielectric film () on the first electrode layer (), depositing a sacrificial layer () on the first dielectric film (), the sacrificial layer () being removable for forming a cavity () of the transducer, depositing a second dielectric film () on the sacrificial layer (), depositing a second electrode layer () on the second dielectric film (), and patterning at least one of the deposited layers and films (), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (), in particular a CMUT, manufactured by such method.

The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process.

Capacitive micromachined ultrasound transducer

The present invention relates to a through-wafer via device () comprising a wafer () made of a wafer material and having a first wafer surface () and a second wafer surface () opposing the first wafer surface (). The through-wafer via device () further comprises a plurality of side by side first trenches () provided with a conductive material and extending from the first wafer surface () into the wafer () such that a plurality of spacers () of the wafer material are formed between the first trenches (). The through-wafer via device () further comprises a second trench () provided with the conductive material and extending from the second wafer surface () into the wafer (), the second trench () being connected to the first trenches (). The through-wafer via device () further comprises a conductive layer () made of the conductive material and formed on the side of the first wafer surface (), the conductive material filling the first trenches () such that the first conductive layer () has a substantially planar and closed surface.

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Eindhoven, Netherlands

Marcel Mulder