Basf Se Corporation

Polyera Corporation

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Flexterra, Inc.

Rieke Metals, Inc.

Marcel Kastler

Silke Annika Koehler

Florian Doetz

Antonio Facchetti

He Yan

Subramanian Vaidyanathan

Zhihua Chen

Yan Zheng

Klaus Muellen

Imme Domke

Friederike Fleischhaker

Andrey Karpov

Lothar Weber

Tobin Jay Marks

Shaofeng Lu

Hartmut Hibst

Emmanuel Martin

Klaus Müllen

Ashok Kumar Mishra

Hiroyoshi Noguchi

Veronika Wloka

Ralph Rieger

Dirk Beckmann

Ingolf Hennig

Hans Jürg Kirner

Jordan R Quinn

Mi Zhou

Xinliang Feng

Matthias Kleiner

Martin Elbs

Peter Eckerle

Miaoyin Liu

Radoslav Parashkov

Peng Gao

Hoi Nok Tsao

Bertha Tan

Tobin J Marks

Don Cho

Florian Dötz

Silke Koehler

Jordan Quinn

Silke Annika KÖHLER

Ashoki Kumar Mishra

Silke Köhler

A method for producing an organic semiconductor device () having at least one organic semiconducting material () and at least two electrodes () adapted to support an electric charge carrier transport through the organic semiconducting material () is disclosed. The organic semiconducting material () intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer () which at least partially is interposed between the organic semiconducting material () and at least one of the electrodes () of the organic semiconductor device (). The intermediate layer () comprises at least one thiol compound having the general formula HS&#x2014;R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer () an ambipolar charge carrier transport between the electrodes () is suppressed in favor of a unipolar charge carrier transport.

Method for producing an organic semiconductor device

Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Semiconductor materials prepared from dithienylvinylene copolymers

Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Disclosed are new semiconductor materials prepared from rylene-(&#x3c0;-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials prepared from rylene-(&#x3c0;-acceptor)copolymers

The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of

Polyimides as dielectric

Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.

Perylene-based semiconductors and methods of preparation and use thereof

The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:

Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers

The present invention relates to a continuous process for the production of polymeric coupling products by using a reactor assembly which is equipped with two or more reaction cells. The educt fluid is pumped through the reaction cells and thoroughly mixed therein by means of agitators. Preferably the process according to the invention is used for the preparation of coupling products which show at least partially precipitation and/or gelation effects during the performance of the synthesis. The precipitation and/or gelation effects are associated with and increase of the viscosity of the reaction system under reaction conditions. The products which are obtained by the process according to the invention have increased molecular weight and low polydispersity over similar products which were obtained in batch experiments.

Process for the production of polymers by using coupling reactions

Process for producing semiconductive layers

The present invention relates to an electronic device comprising at least one dielectric layer, said dielectric layer comprising a crosslinked organic compound based on at least one compound which is radically crosslinkable and a method of making the electronic device.

Crosslinkable dielectrics and methods of preparation and use thereof

Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Perylene-imide semiconductor polymers

The present invention relates to particles which have been modified by a modifier and a dispersion medium comprising the modified particles. The surface-modified metal, metal halide, metal chalcogenide, metal nitride, metal phosphide, metal boride or metal phosphate particles or mixtures thereof have an average particle diameter of from 1 to 500 nm and their surface has been modified by one or more modifiers of the formula (I) (II) and (III) 

Modified particles and dispersions comprising these

A process for preparing a regioregular homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol by a) reacting a 3-substituted 2,5-dihalothiophene, 2,5-dihaloselenophene, 2,5-dihalothiazol or 2,5-dihaloselenazol with reactive zinc, magnesium and/or an organomagnesium halide to give an organozinc or organomagnesium intermediate containing one halozinc or one halomagnesium group, b) bringing the organozinc or the organomagnesium intermediate into contact with a Ni(II), Ni(O), Pd(II) or Pd(0) catalyst to initiate the polymerization reaction, and c) polymerizing the organozinc or the organomagnesium intermediate to give a regioregular head-to-tail homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol characterized in that the polymerization reaction is carried out at a temperature rising from a lower temperature Tto a higher temperature Tduring a time t, wherein Tis in the range of from &#x2212;40 to 5&#xb0; C. and Tis in the range of from &#x2212;20 to 40&#xb0; C., wherein T&#x2212;Tis at least 10&#xb0; C. and the average rate of increase (T&#x2212;T)/tis in the range of from 0.05&#xb0; C./min to 1&#xb0; C./min.

Process for preparing regioregular poly-(3-substituted) thiophenes, selenophenes, thiazoles and selenazoles

Poly(5,5'-bis(thiophen-2-yl)-benzo[2,1-b;3,4-b&#x2032;]dithiophene) comprising as repeating units the group of the formula (I) wherein R is independently selected from a) a Calkyl group, b) a Calkenyl group, c) a Calkynyl group, d) a Calkoxy group, e) a &#x2014;Y&#x2014;Ccycloalkyl group, f) a &#x2014;Y&#x2014;Caryl group, g) a &#x2014;Y-3-12 membered cycloheteroalkyl group, or h) a &#x2014;Y-5-14 membered heteroaryl group, wherein each of the Calkyl group, the Calkenyl group, the Calkynyl group, the Ccycloalkyl group, the Caryl group, the 3-12 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 Rgroups, Ris independently selected from a) a S(O)&#x2014;Calkyl group, b) a S(O)&#x2014;OCalkyl group, c) a S(O)&#x2014;OCaryl group, d) a C(O)&#x2014;OCalkyl group, e) a C(O)&#x2014;OCaryl group, f) a Calkyl group, g) a Calkenyl group, h) a Calkynyl group, i) a Calkoxy group, j) a Ccycloalkyl group, k) a Caryl group, l) a 3-12 membered cycloheteroalkyl group, or m) a 5-14 membered heteroaryl group, Y is independently selected from a divalent Calkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2, and having a number average molecular weight Min the range of from 5,000 to 200,000 g/mol. 

Poly(5,5'bis(thiophen-2-yl)-benzo[2,1-b;3,4-b&#x2032;]dithiophene) and its use as high performance solution processable semiconducting polymer

Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials and methods of preparation and use thereof

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Basel, Switzerland

Marcel Kastler