Soitec

Nxp B.v.

Sony Semiconductor Solutions Corporation

S.o.i.tec Silicon on Insulator Technologies

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Marcel Broekaart

Ionut Radu

Arnaud Castex

Thierry Barge

Pascal Guenard

Oleg Kononchuk

Eric Desbonnets

Didier Landru

Gweltaz Gaudin

Chrystelle Lagahe Blanchard

Bernard Aspar

Nadia Ben Mohamed

Luciana Capello

Frédéric Allibert

Laurent Marinier

Daniel Delprat

Eric Neyret

Ludovic Ecarnot

Patrick Reynaud

Vincent Larrey

Frédéric Mazen

Pablo Acosta Alba

Isabelle Bertrand

Damien Parissi

Jean-Pierre Raskin

Carine Duret

Christelle Veytizou

Gregory Riou

Morgane Logiou

Séverin Rouchier

Arnoud Willem Fortuin

Marion Migette

Norbert Colombet

Martin Rack

Stéphane Thieffry

Eric Desbonnet

Aymen Ghorbel

Bruno Clemenceau

Franck Colas

Sébastien Molinari

Cedric Charles-Alfred

A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.

Method for transferring a thin layer onto a support substrate provided with a charge-trapping layer

A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Method for manufacturing a substrate

A method for fabricating a semiconductor-on-insulator structure involves providing a donor substrate comprising a weakened zone delimiting a layer to be transferred, providing a receiver substrate, and bonding the donor substrate to the receiver substrate. The layer to be transferred is located on the bonding-interface side. A bonding wave is initiated at a first region on the periphery of the interface, and the wave is propagated toward a second region on the periphery of the interface opposite the first region. The difference in speed of propagation of the bonding wave between a central portion of the interface and a peripheral portion of the interface is controlled such that the speed of propagation of the bonding wave is lower in the central portion than in the peripheral portion. The donor substrate is detached along the weakened zone to transfer the layer to be transferred to the receiver substrate.

Method for manufacturing a semiconductor-on-insulator substrate

A process for producing a receiver substrate for a semiconductor-on-insulator structure for radiofrequency application comprises the following steps:—providing a semiconductor substrate comprising a base substrate made of monocrystalline material and a charge-trapping layer made of polycrystalline silicon arranged on the base substrate;—oxidizing the charge-trapping layer to form an oxide layer arranged on the charge-trapping layer. The oxidation of the charge-trapping layer is performed at least partly at a temperature lower than or equal to 875° C., in the following manner:—starting the oxidization at a first temperature (T) between 750° C. and 1000° C.;—decreasing the temperature down to a second temperature (T), lower than the first temperature (T), between 750° C. and 875° C.;—continuing the oxidization at the second temperature (T).

Process for producing a receiver substrate for a semiconductor-on-insulator structure for radiofrequency applications and process for producing such a structure

The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

Method of mechanical separation for a double layer transfer

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a first free surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer, wherein the useful layer comprises an area of nanocavities.

Hybrid structure for a surface acoustic wave device

A method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprises: a) the supply of the donor substrate and the receiver substrate, b) the formation in the donor substrate of an embrittlement zone delimiting the layer to transfer, c) the bonding of the donor substrate on the receiver substrate, the surface of the donor substrate opposite to the embrittlement zone with respect to the layer to transfer being at the bonding interface, and d) the detachment of the donor substrate along the embrittlement zone. A step of controlled modification of the curvature of the donor substrate and/or the receiver substrate is performed before the bonding step.

Method for manufacturing a semiconductor on insulator type structure by layer transfer

A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm&#xb7;cm and a thickness greater than 5 microns positioned on the first insulating layer.

Support for a semiconductor structure

The disclosure relates to a process for locating devices, the process comprising the following steps:

Method for locating devices

Growing community of inventors

Theys, France

Marcel Broekaart