Basf Se Corporation

Marcel Brill

Daniel Loeffler

Yeni Burk

Volodymyr Boyko

Szilard Csihony

Lothar Engelbrecht

Patrick Wilke

Klemens Massonne

Martin Merger

Andreas Klipp

Frank O Pirrung

Francisco Javier Lopez Villanueva

Frank Hermanutz

Jean-Pierre Berkan Lindner

Joachim Ruch

Michael R Buchmeiser

Frank Pirrung

Johannes David Hoecker

Jan Ole Mueller

Sheng Hsuan Wei

Maike Bergeler

Mei Chin Shen

Olivier Fleischel

Joerg Unold

The invention relates to the use of a composition comprising a Cto Calkanol and a carboxylic acid ester of formula (I) wherein Ris selected from a Cto Calkyl, which may be unsubstituted or substituted by OH or F, and —X—[O—X]—H; Ris selected from a Cto Calkyl, which may be unsubstituted or substituted by OH or F, and —X—[O—X]—H; X, Xare independently selected from Cto Calkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the Cto Calkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.

Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:

Composition, its use and a process for selectively etching silicon-germanium material

The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

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Ludwigshafen, Germany

Marcel Brill