France Telecom

France Telecom Etablissement Autonome De Droit Public

Marcel Bensoussan

Christophe Minot

Yves Nissim

Jean-Louis Oudar

Elchuri K Rao

Jean-Francedillaois Palmier

The present invention relates to a device for both-way transposition between optical signals and electrical signals, for a communications system, said device comprising a vertically integrated component comprising an optically driven oscillator based on a negative differential conductance mechanism, for performing optical-to-millimetric conversion on the down path, and an asymmetric Fabry-Perot cavity modulator for performing the electrical-to-optical conversion function on the up path.

Device for both-way transposition between optical signals and electrical

This invention relates to a process for producing a matrix of 'all optical' vertically-structured quantum well components. This process consists in the encapsulation of a half-structure constituted by a lower mirror (2) and an active zone (3) partially covered by a self-alignment mask (4) with a negative dielectric layer (7) whose thickness is given by the Bragg condition at the working wavelength. The encapsulated half-structure is thermally treated to induce an alloy interdiffusion (9) in the non-covered parts of the active zone, and covered with one or several negative and positive layers (10,11) so as to complete the upper Bragg mirror.

Process for producing a matrix of 'all optical' vertically-structured

This invention relates to a process for producing an electrically controllable matrix of vertically-structured quantum well components from a substrate on which a lower Bragg mirror has been 'epitaxiated', which said mirror is made up of one or several alternations of semiconductor thin layers surmounted by an active layer consisting of compound III/V-based quantum well heterostructures, characterized in that:

Process for producing an electrically controllable matrix of vertically

Guided-wave photoreceptor based on quantum wells made of semiconductor materials, particularly for coherent communications system with polarization diversity. This photoreceptor has at least one pair composed of a first photodetector (76) and a second photodetector (78). At least the first photodetector is formed on a semiconductor substrate (94) and has a multilayer ribbon with multiple quantum wells made of semiconductor material (100); this multilayer ribbon is provided to guide an incident light; the first photodetector is capable of absorbing the transverse magnetic component of that light, whose electrical field has a component perpendicular to the plane of the multilayer; the transverse electrical component of that light is virtually not absorbed in the first photodetector; the second photodetector is provided to absorb this transverse electrical component.

Growing community of inventors

Boulogne, France

Marcel Bensoussan