Intel Corporation

Marcel A Wall

Darko Grujicic

Rengarajan Shanmugam

Aleksandar Aleksov

Srinivas V Pietambaram

Kristof Darmawikarta

Rahul N Manepalli

Suddhasattwa Nad

Benjamin Duong

Sashi S Kandanur

Roy Dittler

Helme Castro De La Torre

Thomas I Sounart

Chandrasekharan Nair

Srinivasan Raman

Daniel Sowa

Robert Baresel, Ii

Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.

Glass substrates having transverse capacitors for use with semiconductor packages and related methods

The present disclosure is directed to an electroless plating process using a panel basket for holding semiconductor panels comprising a plurality of metal pads and shielding the metal pads from contaminants and over-etching and under-etching caused by the contaminants.

Electroless plating process

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Phoenix, AZ, United States of America

Marcel A Wall