Asml Netherlands B.v.

Marc Van Kemenade

Patrick Warnaar

Franciscus Godefridus Casper Bijnen

Hoite Pieter Theodoor Tolsma

Martijn Petrus Christianus Van Heumen

Manfred Gawein Tenner

Remco Marcel Van Dijk

Ralph Jozef Johannes Gerardus Anna Maria Smeets

Jozef Cornelis Antonius Roijers

Sergii Denega

Disclosed is a laser-driven photon source comprising drive optics which focus drive radiation so as to maintain a plasma. The point spread function of the drive optics has a point spread function () which is configured such that a spectral position of a peak output wavelength of a black body portion of output radiation emitted by said plasma within a desired wavelength band.

Laser-driven photon source and inspection apparatus including such a laser-driven photon source

A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.

Lithographic apparatus and device manufacturing method to determine improved absolute position of exposure fields using mark structures

A lithographic apparatus and method are used for manufacturing a device. A projection system is configured to project a patterned radiation beam onto a target portion of the substrate. A Higher Order Wafer Alignment (HOWA) model is applied so as to model higher order distortions across the substrate. The model is applied using at least one input parameter for which at least one intra-field effect has been taken into account. In an example, the intra-field effect taken into account is the ScanUp-ScanDown effect and/or the ScanLeft-ScanRight effect.

Lithographic apparatus and device manufacturing method

An alignment mark comprising a periodic structure formed by mark lines is described. In an embodiment, the alignment mark is formed in a scribe lane of a substrate, the scribe lane extending in a scribe lane direction. The alignment mark includes: a first area including a first periodic structure formed by first mark lines extending in a first direction, the first direction being at a first angle &#x3b1; with respect to the scribe lane direction: 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0; and a second area comprising second periodic structure formed by second mark lines extending in a second direction, the second direction being at a second angle &#x3b2; with respect to the scribe lane direction: &#x2212;90&#xb0;&#x2266;&#x3b2;&#x3c;0&#xb0;.

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Waalre, Netherlands

Marc Van Kemenade