Merck Patent Gmbh

Marc Tornow

Peer Kirsch

Andreas Ruhl

Henning Seim

Sebastian Resch

Achyut Bora

Takuya Kamiyama

Itai Lieberman

Julian Dlugosch

Shintaro Arai

Mansour Moinpour

Qiong Tong

Jacob Woodruff

Romana Pajkert

Gerd-Volker Roeschenthaler

Charith Nanayakkara

The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Electronic switching device

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Two bit memory device and method for operating the two-bit memory device and electronic component

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula IR-(A-Z)—(B)—(Z-A)-Sp-G  (I)in which the groups occurring have the meanings defined in Claim; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Method for producing an electronic component which includes a self-assembled monolayer

An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R-(A-Z)&#x2014;B&#x2014;(Z-A)-Sp-G, wherein A, A, B, Z, Z, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.

Electronic switching element

An electronic component () comprising a plurality of switching elements () which comprise, in this sequence,

Electronic component including molecular layer

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Munich, Germany

Marc Tornow