Osram Opto Semiconductors Gmbh

First Sensor Ag

Marc Schillgalies

Christoph Eichler

Alfred Lell

Andreas Miler

Stephan Lutgen

Uwe Strauss

Désirée Queren

Dimitri Dini

Michael Pierschel

Martin Wilke

Teresa Lermer

Iman Sabri Alirezaei

Ruben Chavez

A photosensitive element includes a semiconductor substrate, a light sensitive region formed in the semiconductor substrate, an inactive region at least partly surrounding the light sensitive region, and a protective layer having an opening leaving the light sensitive region uncovered by the protective layer. The protective layer is an anti-reflective coating having in at least a part of a spectral range between 300 nm and 1200 nm a reflectivity of less than 10% and a transmittance of less than 0.1%.

Photosensitive element and optoelectronic component

An optoelectronic semiconductor chip () is herein described which comprises a non-planar growth layer (), which contains at least one first nitride compound semiconductor material, and an active zone (), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (), and a top layer (), which is arranged on the active zone (), the growth layer () comprising structure elements () at a growth surface () facing the active zone ().

Optoelectronic semiconductor chip and method for the production thereof

A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.

Semiconductor laser

An edge emitting semiconductor laser () is specified, comprising an n-side waveguide region () and a p-side waveguide region (); an active zone () for generating electromagnetic radiation; at least one reflection layer () in the n-side waveguide region (), wherein the active zone () is arranged between the two waveguide regions (), the thickness of the n-side waveguide region () is greater than that of the p-side waveguide region (), the refractive index of the reflection layer () is less than the refractive index of the n-side waveguide region () adjoining the reflection layer ().

Edge-emitting semiconductor laser

An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

Semiconductor layer structure with superlattice

The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (), which comprises a waveguide region (), wherein the waveguide region () comprises a first waveguide layer (A), a second waveguide layer (B) and an active layer () arranged between the first waveguide layer (A) and the second waveguide layer (B) and serving for generating laser radiation (), and the waveguide region () is arranged between a first cladding layer (A) and a second cladding layer (B) disposed downstream of the waveguide region () in the growth direction of the semiconductor body (). The waveguide region () has a thickness d of 400 nm or less, and an emission angle of the laser radiation () emerging from the semiconductor body () in a direction parallel to the layer plane of the active layer () and the emission angle of the laser radiation () emerging from the semiconductor body () in a direction perpendicular to the layer plane of the active layer () differ from one another by less than a factor of 3.

The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.

The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.

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Berlin, Germany

Marc Schillgalies