Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Marc Rabarot

Jean-Marc Fedeli

Laurent Clavelier

Lamine Benaissa

Engin Molva

Philippe Thony

Joel Magnin

Laurent Fulbert

Marie-Therese Delaye

Chantal Arena

François Templier

Eric Ollier

Michel Ida

Jean Marty

A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Optoelectronic device manufacturing method

A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes

A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

Method for manufacturing a very-high-resolution screen using a nanowire-based emitting anisotropic conductive film

The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.

Epitaxial methods for reducing surface dislocation density in semiconductor materials

Process for the formation of at least one concave relief ( ) in a substrate comprising forming at least one embossment of material subject to creep ( ) on the substrate ( ), &mdash;heating of the material subject to creep to a temperature sufficiently high to cause creep of the said material, and&mdash;etching of the substrate and the crept material to form relief in the substrate. According to the invention, the crept material is solidified in a state in which it has a concave relief.

Method for forming a concave micro-relief in a substrate and use of said method for producing optical components

Process and apparatus for the formation of patterns in a photosensitive resin layer or photoresist by continuous laser irradiation, application to the production of microtip emissive cathode electron sources and flat display screens. Formation takes place of non-mutually interfering elementary light beams (41), there is at least one relative translation at constant light power and speed of said beams with respect to the layer in order to irradiate lines thereof, each line receiving a light dose lower than that necessary for the development of the resin, a relative rotation of all the beams with respect to the layer takes place, the translation is recommenced in order to irradiate other lines, each line receiving a light dose complimentary to the preceding dose and the resin is developed.

Process and apparatus for the formation of patterns in a photoresist by

This invention relates to a procedure for assembling two structures (2, 4) comprising:

Assembly procedure for two structures and apparatus produced by the

A microlaser cavity including an entry mirror, an exit mirror (36), an active laser medium. Also included is a mechanism for selecting cavity transverse modes when the cavity is pumped, in order to enable oscillation of one or several cavity transverse modes and to prevent oscillation of other cavity transverse modes.

Microlaser cavity and microlaser with mode selection and manufacturing

Microlaser cavity and externally controlled, passive switching, pulses solid microlaser including a saturable absorber 46 and a device (60, 62) for introducing a beam 56 into the microlaser cavity initiating or starting saturation of the saturable absorber.

Microlaser cavity and externally controlled, passive switching, solid

A microoptical component including a microlens having a focal axis and a microbeam to which said microlens, is integrally fixed said microbeam extending along an axis substantially perpendicular to the focal axis of the microlens and undergoing elastic deformations along an axis substantially perpendicular to the focal axis of the microlens and to the axis along which the microbeam extends.

Microoptical components and optomechanical microdeflectors with

The invention relates to a microlaser cavity, with active Q switching, characterized in that it comprises:

Microlaser cavity, a solid state pulsed microlaser with active

Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6). The barrier or barriers (20, 22, 26, 28, 30) can be constituted by a high energy implantation of H.sub.2.sup.+ ions.

Detection system for a magnetic bubble memory in hybrid technology

A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.

Growing community of inventors

Seyssinet, France

Marc Rabarot