Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Marc R Stack

George C Jacob

Jeffrey Borcherdt Miller

Diego Lugo

Yuhua Tong

Bainian Qian

Julia Kozhukh

Andrew Wank

Teresa Brugarolas Brufau

Tony Quan Tran

David Michael Veneziale

Marty W DeGroot

Jeffrey James Hendron

Fengji Yeh

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Method of making composite polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Controlled-porosity method for forming polishing pad

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of &#x2267;10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of &#x3c;40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Chemical mechanical polishing pad and method of making same

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Chemical mechanical polishing pad composite polishing layer formulation

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Middletown, DE, United States of America

Marc R Stack