Centre National De La Recherche Scientifique

Universitéde Strasbourg

Elf Exploration Production

Sicat

Université Louis Pasteur De Strasbourg

E.i. Dupont De Nemours and Company

Conocophillips Company

Pechiney Recherche

Pechiney Electrometallurgie

Université Louis Pasteur

Marc J Ledoux

Cuong Pham-Huu

Pierre Bernhardt

Claude Crouzet

Jean Nougayrede

Nicolas Keller

Sabine Savin-Poncet

Jean-Louis Guille

Kostantinos Kourtakis

Joe D Allison

Raymond Ziessel

Andre Philippe

Serge Picaud

Doug S Jack

Jan J Lerou

Dominique Dubots

Loïc Charbonniere

Dominique Begin

Stephan Basso

Jean-Philippe Tessonnier

Valérie Keller-Spitzer

Estelle Vanhaecke

Thierry Romero

Izabela Janowska

Charlotte Pham-Huu

Sylvain Hantzer

Cuong Pham Huu

Cuong P Huu

Edd Blekkan

Eric Peschiera

Nougayrede Jean

Savin-Poncet Sabine

Pham Huu Cuong

Keller Nicolas

Christophe Bouchy

Kambiz Chizari

Ovidiu Ersen

Michel Roux

Anne Robe

Shankar Muthukonda Venkatakrishnan

Thomas Cottineau

Ricardo Vieira

Valerie Spitzer-Keller

Francois Garin

Gauthier Wine

Neil Meldrum

Baudain Heinrich

Crouzet Claude

Svetlana Ivanova

Benoit Louis

Stéphan Basso

The preparation of graphene, mono-, bi- and multi-layers from graphite-based precursor materials, for example, pencil lead or graphite, by a method of mechanical thinning on the surface of a planar substrate with controlled roughness, followed by sonication in order to collect the graphene deposited on the substrate in a liquid medium. The bearing force during thinning by mechanical friction enables the number of graphene sheets deposited on the surface of the substrate to be controlled.

Preparation of graphene by mechanically thinning graphite materials

An artificial retina that includes: (i) a substrate; (ii) a first layer, placed onto said substrate and including photovoltaic material portions separated by at least one insulating material portion; and (iii) a second layer, placed onto said first layer and including conductive material portions separated by at least one insulating material portion. In said artificial retina, the photovoltaic material includes a titanium dioxide semiconductor.

Artificial retina that includes a photovoltaic material layer including a titanium dioxide semiconductor

A composite comprising a support activated by impregnation and carbon nanotubes or nanofibers formed by vapor deposition, wherein the weight of said carbon nanotubes or nanofibers formed on the said support is at least equal to 10.

Composites based on carbon nanotubes or nanofibers deposited on an activated support for use in catalysis

The photocatalyst based on a composite WO&#x2014;SiC/TiOsemiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives1 photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into COand HO. The process for the photocatalytic purification of industrial, agricultural or domestic gaseous effluent may be conducted at room pressure and temperature. Its conversion rate is high and stable.

Photocatalyst and process for purifying gas effluent by photocatalytic oxidation

The invention relates to a composite formed of a zeolite (such as ZSM-5 zeolite, &#x3b2;-zeolite and silicalite) deposited on a rigid support, wherein the rigid support comprises silicon carbide (SiC) with a specific surface area BET of at least 5 m/g. Preferably, the support is a &#x3b2;-SiC foam with a specific area of between 10 and 500 m/g. This composite may be used as a catalyst and/or a catalyst support for chemical reactions in a gas or liquid medium. For example materials of the present invention are useful for example, in connection with cracking, acylation, alkylation and/or isomerization of hydrocarbons.

Zeolite/SiC composites and their use in catalysis

The present invention provides a process for natural gas in the form, e.g., of stranded gas or associated gas to transportable liquids. More particularly, the present invention provides a process in which the gas is non-oxidatively converted to aromatic liquid, preferably in proximity to the welihead, which may be onshore or offshore. In one aspect, the present invention provides integration of separation of wellhead fluids into associated gas and crude with blending of the aromatic liquid derived from the gas with the crude. Alternatively, or in combination, in another aspect, the present invention provides integration of conversion of byproduct hydrogen to power with non-oxidative conversion of gas to aromatic liquid.

Non-oxidative conversion of gas to liquids

A catalyst comprising vanadium phosphorus oxide combined with a thermally conductive material is particularly useful for the selective hydrocarbon oxidations (e.g., butane to maleic anhydride) and can be prepared by forming a suspension comprising a vanadium (IV) phosphate compound in a liquid medium (via hydrochloric acid digestion of V O and H PO in an aqueous solvent or via heating vanadium pentoxide with at least one substantially anhydrous unsubstituted alcohol having 1-10 carbon atoms, 1-3 hydroxyl groups free from olefinic double bonds to form a feed of vanadium pentoxide reduced to a valence between 4 and 4.6, and then contacting the feed with a solution of orthophosphoric acid and at least one unsubstituted alcohol), adding a thermally conductive material to the suspension under agitation at moderated temperature between 40&deg; C. and 120&deg; C., followed by drying, optionally but preferably washing and calcining (either in situ or ex situ) the material thus formed.

Vanadium phosphorus oxide catalyst having a thermally conductive support

A process for catalytically oxidizing H S contained in a gas directly to sulphur containing the following steps: combining the H S-containing gas with a gas containing free oxygen in an amount to produce an oxygen-enriched H S-containing gas having O /H S molar ratio ranging from about 0.05 to about 15; and contacting the oxygen-enriched H S-containing gas with a catalyst for selective oxidation of H S to sulphur, wherein the catalyst includes a catalytically active phase combined with a silicon carbide-based support and wherein the active phase of the catalyst consists of at least one oxysulphide of at least one metal selected from the group consisting of iron, copper, nickel, cobalt, chromium, molybdenum and tungsten, at a temperature above the dew point of sulphur formed during H S oxidation.

Process for oxidizing the H2S contained at low concentration in a gas directly to sulphur by catalytic means and in the vapour pause

A regenerative process for oxidizing H,S contained in low concentration in a gas directly to sulphur including combining the H,S-containing gas with a gas containing free oxygen in an amount to form an O,/H,S-containing gas with an O,/H,S molar ratio ranging from 0.05 to 15; contacting the O,/H,S-containing gas with a catalyst for the selective oxidation of H,S to sulphur, wherein the catalyst includes a catalytically active phase containing at least one oxysulphide of at least one metal selected from the group consisting of nickel, iron, cobalt, copper, chromium, molybdenum and tungsten combined with a silicon carbide support and including a compound of at least one transition metal, at temperatures below the dew point of the sulphur formed by oxidation of H,S and depositing the sulphur on the catalyst; periodically regenerating by flushing the sulphur-laden catalyst using a non-oxidizing gas at temperatures of between 200&deg; C. and 500&deg; C. to vaporize sulphur retained on the catalyst; and cooling the regenerated catalyst below the dew point of the sulphur to a temperature for H,S oxidation to be carried out again, such cooling being carried out by a gas having a temperature less than 180&deg; C.

Method and catalyst for direct sulphur oxidation of H2S contained in a gas

Method and catalyst for catalytically oxidizing a low concentration of

A process for isomerizing straight chain hydrocarbons having at least seven carbon atoms by forming a reaction mixture including at least one of the straight chain hydrocarbons and hydrogen and passing the reaction mixture over a catalyst including a molybdenum compound, at least the surface of which is formed of molybdenum carbide partially oxidized in the form of at least one oxycarbide.

Process for the isomerisation of straight hydrocarbons containing at

The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m.sup.2 .multidot.g.sup.-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000.degree. C., the process comprising reacting vapors of silicon monoxide SiO on carbon, being characterized by: generating vapors of SiO in a first reaction zone by heating a mixture SiO.sub.2 +Si at a temperature of between 1100.degree. and 1400.degree. C., under a pressure of between 0.1 and 1.5 hPa; and, in a second reaction zone, contacting the SiO vapors with reactive carbon in the divided state with a specific surface area that is at least equal to 200 m.sup.2 .multidot.g.sup.-1 at a temperature of between 1100.degree. and 1400.degree. C. Preferably, the reactive carbon is doped by an addition of from 1 to 10% by weight of a metallic element selected from uranium, cerium, titanium, zirconium, hafnium and lanthanides.

Process for the production of silicon carbide with a large specific

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Neoules, France

Marc J Ledoux