Asml Netherlands B.v.

Carl-zeiss-smt Ag

Marc Hubertus Lorenz Van Der Velden

Vadim Yevgenyevich Banine

Johannes Hubertus Josephina Moors

Bastiaan Theodoor Wolschrijn

Maarten Marinus Johannes Wilhelmus Van Herpen

Wouter Anthon Soer

Lucas Henricus Johannes Stevens

Bastiaan Matthias Mertens

Thomas Stein

Kurt Gielissen

Yurii Victorovitch Sidelnikov

Johannes Peterus Henricus De Kuster

Levinus Pieter Bakker

Frank Jeroen Pieter Schuurmans

Vladimir Vitalevitch Ivanov

Markus Weiss

Konstantin Nikolaevitch Koshelev

Michiel David Nijkerk

Givi Georgievitch Zukavishvili

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.

Lithographic apparatus, system and device manufacturing method

A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

Lithographic apparatus and device manufacturing method

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Eindhoven, Netherlands

Marc Hubertus Lorenz Van Der Velden