Asml Netherlands B.v.

Agc Glass Europe

Marc Hauptmann

Alexander Ypma

Weitian Kou

Michiel Kupers

Hakki Ergün Cekli

Cédric Désiré Grouwstra

Erik Johannes Maria Wallerbos

Stefan Cornelis Theodorus Van Der Sanden

David Frans Simon Deckers

Willem Seine Christian Roelofs

Erik Henri Adriaan Delvigne

Lydia Marianna Vergaij-Huizer

Iryna Dovbush

Manuel Giollo

Everhardus Cornelis Mos

Stijn Mahieu

Richard Joseph Bruls

Paul Janssen

Jean-Michel Depauw

Ronald Van Der Wilk

Kornelis Tijmen Hoekerd

Jorge Alberto Vieyra Salas

Hyunwoo Yu

Anne-Christine Baudouin

Rizvi Rahman

Dylan John David Davies

Petrus Johannes Van Den Oever

Amir Bin Ismail

Antonius Hubertus Van Schijndel

Min-Sub Han

Edwin Johannes Maria Janssen

Naoko Tsugama

Roy Werkman

Ralph Brinkhof

Gaetan Di Stefano

Hansjoerg Weis

Cornelis Johannes Henricus Lambregts

Jacques Dumont

Ekaterina Mikhailovna Viatkina

Michael Purwins

Eric Mathieu

Allwyn Boustheen

Raheleh Pishkari

Jiapeng Li

A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

Method for controlling a semiconductor manufacturing process

A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

Method for generating a control scheme and device manufacturing method

A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Method and apparatus for optimization of lithographic process

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

Methods of determining corrections for a patterning process

A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.

Methods and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process

Method and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process, lithographic processing system including diagnostic apparatus

The invention relates to a solar protection glazing comprising, on at least one of the faces of a glass substrate, a multi-layer stack comprising at least one layer absorbing solar radiation of at least 3 nm and dielectric coatings surrounding said solar radiation absorbing layer. According to the invention, the light reflection of the glass substrate coated with the multi-layer stack, measured on the substrate side, is at least 20% and is at least two times the light reflection of the glass substrate coated with the multi-layer stack measured on the stack side, and the reflection color on the substrate side has a colorimetric coordinate value a* of less than 2 and a colorimetric coordinate value b* of less than 5. The invention is particularly useful as an automobile glazing, in particular on the roof thereof, as a building glazing or as a household oven.

Solar protection glazing

The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+1 dielectric coatings, and a barrier layer directly superposed on the last functional layer furthest away from the substrate, characterized in that: (i) the first dielectric coating closest to the substrate comprises a layer made from an oxide, in direct contact with the substrate, (ii) the internal dielectric coating or coatings surrounded by two functional layers comprise a layer made from a silicon nitride or a silicon oxide with a thickness greater than 5 nm surrounded on both sides by layers made from an oxide other than silicon oxide with thicknesses greater than 5 nm, (iii) the barrier layer is based on zinc oxide or consists of an indium oxide possibly doped with tin, and (iv) the last dielectric coating furthest away from the substrate comprises, in order starting from the substrate: a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm and a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm.

Low-emissivity and anti-solar glazing

The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+1 dielectric coatings, characterized in that: (i) the first dielectric coating comprises a layer made from an oxide in contact with the substrate, (ii) the portion of the coating stack between two functional layers comprises, in order: a barrier layer, a zinc oxide-based layer, a layer of zinc-tin mixed oxide, a nucleation layer, and (iii) the last dielectric coating comprises a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm overlaid with a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm superposed thereon.

Growing community of inventors

Turnhout, Belgium

Marc Hauptmann