Intel Corporation

Institut Fur Mikroelektronik Stuttgart

Marc E Landgraf

Jahanshir J Javanifard

Sandeep K Guliani

Mase J Taub

Albert Fazio

Gregory E Atwood

James Brennan, Jr

Robert L Baltar

Ravi Annavajjhala

Mark D Winston

Suibin Zhang

Dow-Ping D Wong

The present invention provides a method, apparatus, and system for rapid transition of a charge pump circuit from a low power state to a high power state. The charge pump circuit has at least one pump stage. The at least one pump stage includes at least a first capacitor coupled to a gate of a first switching transistor forming a boot node and at least a second capacitor coupled to an output node of the at least one pump stage. It is determined whether the charge pump circuit is in the low power state or the high power state. If the charge pump circuit is in the low power state, a first predetermined voltage and a second predetermined voltage that are different than the ground voltage level are applied to the boot node and the output node, respectively. If the charge pump circuit is in the high power state, the first predetermined voltage and the second predetermined voltage are removed from the boot node and the output node, respectively.

Method and apparatus for rapid initialization of charge pump circuits

An embodiment of the invention is directed to a method of operating a flash memory, which includes discharging at least one local wordline of an unselected block of flash memory cells during an interval in which a selected set of flash memory cells are being conditioned, such that the at least one local wordline does not develop a charge that is sufficient to corrupt the data stored in the unselected block.

Preventing data corruption in a memory device using a modified memory cell conditioning methodology

Image cell for an image-recorder chip, for protection of high input

A circuit for generating one of a plurality of output voltages. The circuit includes a first conductor coupled to a first supply voltage, a second conductor coupled to a second supply voltage, a charge pump having an input and an output, a multiplexor, a first regulation circuit, and a second regulation circuit. The first regulation circuit is coupled to the first input of the multiplexor and the output of the charge pump. The first regulation circuit is for generating a first regulation voltage in response to the first supply voltage and the output of the charge pump such that the charge pump outputs a first output voltage when the first input of the multiplexor is coupled to the output of the multiplexor. The second regulation circuit is coupled to the second input of the multiplexor and the output of the charge pump. The second regulation circuit is for generating a second regulation voltage in response to the second supply voltage and the output of the charge pump such that the charge pump outputs a second output voltage when the second input of the multiplexor is coupled to the output of the multiplexor. The multiplexing of the regulation circuitry results in a reduced number of components.

Charge pump circuit for providing multiple output voltages for flash

A nonvolatile memory residing on a single substrate is described. The nonvolatile memory includes a memory array having at least a memory cell. The memory cell includes a drain region, a source region, a control gate, and a floating gate. A drain programming voltage generation circuit is coupled to a programming voltage source and the drain region of the memory cell for providing a drain programming voltage to the drain region of the memory cell during programming of the memory cell. A control circuit is coupled to the drain programming voltage generation circuit for causing the drain programming voltage to vary with respect to a programming ability of the memory cell such that the memory cell is programmed to be within a predetermined range of a predetermined threshold voltage with a predetermined gate programming voltage for a predetermined programming time. A method for setting the drain programming voltage for the nonvolatile memory such that the drain programming voltage varies inversely with respect to the programming ability of the nonvolatile memory is also described.

Circuitry and method for selecting a drain programming voltage for a

A reset circuit in a system comprising a microprocessor coupled to a flash memory by a system bus. The reset circuit has a reset signal generation circuit, a sleep signal generation circuit and a reset override signal generation circuit. The reset signal generation circuit generates a reset signal when power is applied to the flash memory. The reset signal causes the flash memory to enter a predetermined reset state. The sleep signal generation circuit is coupled to the reset signal generation circuit. The sleep signal generation circuit generates a sleep signal. The sleep signal causes the reset signal generation circuit to enter an energy saving sleep mode when the flash memory is placed in the sleep mode. The reset signal causes the sleep signal generation circuit to reset and suppress generation of the sleep signal. The reset override signal generation circuit is coupled to the reset signal generation circuit. The reset override signal is generated during power-up. The reset override signal forces the reset signal generation circuit to generate the reset signal during power-up even if the reset signal generation circuit is receiving the sleep signal. The reset signal override circuit draws substantially no power when the flash memory is placed in the sleep mode.

Power-up reset override architecture and circuit for flash memory

A detection circuit is described that resides in a nonvolatile memory that includes a memory array and a control circuitry coupled to the memory array for controlling operations of the memory array. The detection circuit is coupled to the control circuitry and receives a power supply for detecting potential level of the power supply and for generating a reset signal to reset the control circuitry until the potential level of the power supply rises above a predetermined level. The detection circuit includes a resistor, a first, a second, and a third transistor. The first transistor has a first end coupled to receive the power supply, a second end coupled to a first node, and a third end coupled to the first node. The second transistor has a first end coupled to the first node, a second end coupled to ground, and a third end coupled to the ground. The first and second transistors function as a voltage divider. The third transistor has a first end coupled to the power supply, a second end coupled to an output node, and a third end coupled to the first node. The resistor is coupled between the output node and the ground for coupling the output node to the ground when the third transistor is not conducting, and for providing a positive potential at the output node when the third transistor is conducting. When the power supply has not reached the predetermined level, the third transistor is not conducting and the output node outputs the reset signal that is a ground potential. When the power supply rises above the predetermined level, the third transistor starts to conduct and the output node registers the positive potential and ceases generating the reset signal. The first, second, and third transistors are of the same channel type such that the circuitry operates substantially independent of process variations and temperature variations.

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Folsom, CA, United States of America

Marc E Landgraf