Texas Instruments Corporation

California Institute of Technology

Solid State Devices, Inc.

Marc A Nicolet

Elzbieta Kolawa

Scott Robert Summerfelt

Jason Reid

James W Mayer

Meir Bartur

Silvanus S Lau

Hillary Cherry

Pierre Giauque

Stefan M Gasser

Electrically active devices are formed using a special conducting material of the form Tm&mdash;Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

Electrically conducting ternary amorphous fully oxidized materials and their application

A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

Conductive noble-metal-insulator-alloy barrier layer for

Method of forming conductive noble-metal-insulator-alloy barrier layer

A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.

Tungsten barrier contact

A solid phase epitaxially grown semi-conductor is described wherein a thin film of a semi-conductor material together with a thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the material.

Solid phase epitaxial growth

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Pasadena, CA, United States of America

Marc A Nicolet