Imec Vzw

Imec

Interuniversitair Microelektronica Centrum (imec)

Katholieke Universiteit Leuven

Universiteit Hasselt

Steag Micro Tech Gmbh

Interuniversitair Micro-elektronica Centrum Vzw

Other

King Abdulaziz City for Science and Technology

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Internuiversitair Microelektronica Centrum

Marc A Meuris

Paul Mertens

Marc Marcel Heyns

Wilfried B Vandervorst

Marie Buffiere

David Paul Brunco

Matty Caymax

Geert Eneman

Geert Hellings

Tom Borgers

Dirk Maarten Knotter

Martin Weber

Peter De Wolf

Han Chung Lin

Guy Vereecke

Frederik Leys

Wei-e Wang

Ulrich Speh

Guy Brammertz

Stefan DeGendt

Bart Onsia

Ingrid Cornelissen

Sonja Sioncke

Jens Schneider

Hossam ElAnzeery

David Brunco

Marie BUFFIÈRE

Hossam Elanzeery

Renaud Bonzom

The present disclosure related to a method for interconnecting photovoltaic cells in order to form a photovoltaic cells assembly is provided. The method comprises the steps of providing a first photovoltaic cell comprising a first surface, a second surface, a first edge, and a second edge, arranging a conductive wire on the first surface of the first photovoltaic cell according to a certain pattern, and attaching the conductive wire to the first surface of the first photovoltaic cell with the aid of a first non-conductive yarn by stitching in the area of the first edge of the first photovoltaic cell according to a first stitch type.

Method for interconnecting photovoltaic cells and photovoltaic cell assembly

Example embodiments relate to partially translucent photovoltaic modules and methods for manufacturing partially translucent photovoltaic modules. One embodiment includes a method for electrically interconnecting a plurality of thin-film photovoltaic plates. The method includes positioning a plurality of thin-film photovoltaic plates side by side. The thin-film photovoltaic plates are partially translucent or non-translucent. The method also includes providing at least one connection element on a surface of each of the plurality of thin-film photovoltaic plates. The at least one connection element includes a plurality of electrically conductive wires arranged in a grid structure. Further, the method includes physically separating each connection element into a first connection part that includes a plurality of first electrically interconnected, conductive wires and a second connection part that includes a plurality of second electrically interconnected, conductive wires. In addition, the method includes providing busbars and forming electrical busbar connections.

Partially translucent photovoltaic modules and methods for manufacturing

The disclosed technology generally relates to chalcogenide thin films, and more particularly to ternary and quaternary chalcogenide thin films having a wide band-gap, and further relates to photovoltaic cells containing such thin films, e.g., as an absorber layer. In one aspect, a method of forming a ternary or quaternary thin film chalcogenide layer containing Cu and Si comprises depositing a copper layer on a substrate. The method additionally comprises depositing a silicon layer on the copper layer with a [Cu]/[Si] atomic ratio of at least 0.7, and thereafter annealing in an inert atmosphere. The method further includes performing a first selenization or a first sulfurization, thereby forming a ternary thin film chalcogenide layer on the substrate. In another aspect, a composite structure includes a substrate having a service temperature not exceeding 600&#xb0; C. and a ternary chalcogenide thin film or a quaternary chalcogenide thin film on the substrate, where the ternary or quaternary chalcogenide thin film comprises a selenide and/or a sulfide containing Cu and Si.

Method for forming thin film chalcogenide layers

A method for chemically cleaning and passivating a chalcogenide layer is provided, wherein the method comprises bringing the chalcogenide layer into contact with an ammonium sulfide containing ambient, such as an ammonium sulfide liquid solution or an ammonium sulfide containing vapor. Further, a method for fabricating photovoltaic cells with a chalcogenide absorber layer is provided, wherein the method comprises: providing a chalcogenide semiconductor layer on a substrate; bringing the chalcogenide semiconductor layer into contact with an ammonium sulfide containing ambient, thereby removing impurities and passivating the chalcogenide semiconductor layer; and afterwards providing a buffer layer on the chalcogenide semiconductor layer.

Method for cleaning and passivating chalcogenide layers

A method to reduce (avoid) Fermi Level Pinning (FLP) in high mobility semiconductor compound channel such as Ge and III-V compounds (e.g. GaAs or InGaAs) in a Metal Oxide Semiconductor (MOS) device. The method is using atomic hydrogen which passivates the interface of the high mobility semiconductor compound with the gate dielectric and further repairs defects. The methods further improve the MOS device characteristics such that a MOS device with a quantum well is created.

Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

The present invention is related to the field of semiconductor processing and, more particularly, to the formation of low resistance layers on germanium substrates. One aspect of the present invention is a method comprising: providing a substrate on which at least one area of a germanium layer is exposed; depositing over the substrate and said germanium area a metal, e.g., Co or Ni; forming over said metal, a capping layer consisting of a silicon oxide containing layer, of a silicon nitride layer, or of a tungsten layer, preferably of a SiOlayer; then annealing for metal-germanide formation; then removing selectively said capping layer and any unreacted metal, wherein the temperature used for forming said capping layer formation is lower than the annealing temperature.

Methods for forming metal-germanide layers and devices obtained thereby

The invention provides a single-step method for removing bulk metal contamination from III-V semiconductor substrates. The method comprises immersing a metal contaminated III-V semiconductor substrate in a mixture of sulfuric acid and peroxide with a volume ratio of sulfuric acid to peroxide (e.g., hydrogen peroxide) between about 3:1 and about 9:1. After treating the III-V semiconductor substrates with the sulfuric acid-peroxide mixture, the bulk metal contamination may be substantially removed from the substrate while a surface roughness of the substrate after treatment of below about 0.5 nm RMS (2 &#x3bc;m&#xd7;2 &#x3bc;m) is obtained. The invention further provides a method for manufacturing a semiconductor device by removing bulk metal contamination according to the single-step method of the invention before performing processing steps for forming the semiconductor device.

Method for removal of bulk metal contamination from III-V semiconductor substrates

A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap.

Scalable quantum well device and method for manufacturing the same

The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

Method and apparatus for liquid-treating and drying a substrate

A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Method and apparatus for localized liquid treatment of the surface of a substrate

A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Method and apparatus for removing a liquid from a surface

The aim of the invention is to attain a uniform and homogeneous treatment of substrates in a device comprising at least one process container which is arranged in a gas atmosphere and which contains a treatment fluid. Said process container also comprises at least two openings which are located underneath a treatment fluid surface and through which the substrates are linearly guided. In addition, an overflow for the treatment fluid is provided.

Apparatus for treating substrates

The present invention discloses a method for removing silicon nitride from a substrate, characterised in that it comprises contacting said substrate with a molten halogen salt.

Etching of silicon nitride by anhydrous halogen gas

Growing community of inventors

Keerbergen, Belgium

Marc A Meuris