Basf Se Corporation

Basf Coatings Gmbh

Maraike Ahlf

Daniel Loeffler

Heino Sommer

Jacob Haag

Juergen Frank

Regina Vogelsang

Felix Eickemeyer

Torben Adermann

David Dominique Schweinfurth

Fatih Cetinel

Thomas Schaub

Myung Mo Sung

Carsten Sueling

Stephan Klotz

Axel Kirste

Michael Schoenherr

Jan Spielmann

Falko Abels

Boris Gaspar

Lukas Mayr

Karl Matos

Dominik Garella

Jurgen Frank

Frank Kleine Jaeger

Florian Blasberg

Kwan Hyuck Yoon

Tillmann Liebsch

Kinga Izabela Leszczynska

David Scheschkewitz

Jürgen Frank

Robert Hall

Daniel Loffler

Joseph Spencer Ii

Daniel LÖFFLER

Process for making a partially coated electrode active material wherein said process comprises the following steps: (a) Providing an electrode active material according to general formula Li, TMO, wherein TM is a combination of Ni, Co and, optionally, Mn, and, optionally, at least one metal selected from Al, Ti and Zr, and x is in the range of from zero to 0.2, wherein at least 60 mole-% of the transition metal of TM is Ni, and wherein said electrode active material has a residual moisture content in the range of from 50 to 1,000 ppm, (b) treating said electrode active material with a metal alkoxide or metal halide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, (d) repeating the sequence of steps (b) and (c) twice to ten times, (e) performing a post-treatment by heating the material obtained after the last step (d) at a temperature from 200 to 400° C.

Process for making an electrode active material, and electrode active material

A process for making a partially coated electrode active material may involve: (a) providing an electrode active material of the formula LiTMO, wherein TM is a combination of Ni, Co and, optionally, Mn, and, optionally, at least one metal selected from Al, Ti, Mo, W, and Zr, and x is in the range of from zero to 0.2, wherein at least 60 mole-% of the transition metal of TM is Ni, and wherein the electrode active material has a residual moisture content in the range of from 50 to 1,000 ppm; (b) treating the electrode active material with a metal alkoxide or metal halide or metal amide or alkyl metal compound; (c) treating the material obtained in (b) with moisture; and (d) repeating the sequence of (b) and (c) twice to 4 times, wherein, in the last sequence of (b) and (c), moisture is at least partially substituted by ozone.

Process for making a partially coated electrode active material, and electrode active material

The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Process for producing flexible organic-inorganic laminates

The present invention is in the field of processes for producing organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising moving a substrate relative to at least two separate orifices arranged along the relative moving trajectory wherein through at least one orifice an organic compound in the gaseous state is passed towards the surface of the substrate and through at least one other orifice a (semi)metal-containing compound in the gaseous state is passed towards the surface of the substrate and wherein the orifices are mounted on a rotating drum.

Process for producing organic-inorganic laminates

The present invention is related to a process for coating anoxide material, said process comprising the following steps: (a) providing a particulate material selected from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides and lithiated layered nickel-cobalt-manganese oxides, (b) treating said cathode active material with a metal alkoxide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, and, optionally, repeating the sequence of steps (b) and (c), wherein steps (b) and (c) are carried out in a mixer that mechanically introduces mixing energy into the particulate material, or by way of a moving bed or fixed bed, and wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above normal pressure.

Process for coating an oxide material

Processes for producing flexible organic-inorganic laminates are described herein. In particular, a process is provided for producing a laminate comprising at least twice a sequence comprising (a) depositing an inorganic layer by performing 3 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising nitrogen by performing 1 to 3 cycles of a molecular layer deposition process.

The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R, R, R, R, and Ris hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R, R, R, R, and Rare hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2. 

Process for the generation of thin silicon-containing films

Processes for producing flexible organic-inorganic laminates by atomic layer deposition are described, as well as barrier films comprising flexible organic-inorganic laminates. In particular, a process for producing a laminate including (a) depositing an inorganic layer by an atomic layer deposition process, and (b) depositing an organic layer comprising selenium by a molecular layer deposition process is provided.

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Process for the generation of metallic films

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Schriesheim, Germany

Maraike Ahlf