Mitsubishi Electric Corporation

Mao Sawakawa

Masakazu Tani

Hiroki Shiota

Katsushi Nakada

Yoshitaka Miyaji

The semiconductor device includes: a semiconductor module including a plate-shaped semiconductor element, a conductor electrically connected to one surface of the semiconductor element, a heat dissipation plate of which one surface is thermally and electrically connected to another surface of the semiconductor element, a resin member sealing the semiconductor element, the conductor, and the heat dissipation plate, and an insulation heat dissipation member thermally connected to another surface of the heat dissipation plate exposed from the resin member; a heatsink thermally connected to the insulation heat dissipation member; and an electric field inhibiting plate including a plate-shaped thin part covering the one surface of the semiconductor element and opposed thereto so as to be separated therefrom, the thin part being sealed by the resin member, and a connection part extending from the thin part to the heatsink and thermally and electrically connected to the heatsink.

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Tokyo, Japan

Mao Sawakawa