Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Other

Mao-Lin Huang

Lung-Kun Chu

Chung-Wei Hsu

Kuo-Cheng Chiang

Jia-Ni Yu

Chih-Hao Wang

Kuan-Lun Cheng

Chun-Hsiung Lin

Chien-Hsun Wang

Kuan-lun Cheng

Kuo-Cheng Ching

Syun-Ming Jang Jang

Carlos H Diaz

Chun-Fu Lu

Ching-Wei Tsai

Jean-Pierre Colinge

Weng Chang

Cheng-Lung Hung

Li-Ting Wang

Wei-Hao Wu

Peng-Soon Lim

Hung-Ta Lin

Chun-Hsiang Fan

Hui-Cheng Chang

Meng-Ku Chen

Huicheng Chang

Hou-Yu Chen

Chi On Chui

Huan-Chieh Su

Zhi-Chang Lin

Pang-Yen Tsai

Hsin-Yi Lee

Huang-Lin Chao

Kuo-Cheng Lu

Yi-Lun Chen

Jin-Ru Chen

Yung-Ta Li

Hou-yu Chen

Kuo-cheng Chiang

Tsung-Da Lin

Yung-Chang Lin

Chun-Da Wu

Chun-An Lin

Ming-Hwei Hong

Ray-Nien Kwo

Tun-Wen Pi

Yu-Hsing Chang

Pen Chang

A method includes providing a first channel layer of a first transistor and a second channel layer of a second transistor over a substrate, forming a dipole layer over the first channel layer and the second channel layer, forming a patterned hard mask covering the second channel layer and exposing the first channel layer, removing the dipole layer from the first channel layer, removing the patterned hard mask, performing a thermal drive-in process, forming an interfacial dielectric layer on the first channel layer and the dipole layer, and forming a high-k dielectric layer on the interfacial dielectric layer. The dipole layer includes a p-dipole material.

Semiconductor device fabrication methods and structures thereof

A semiconductor device structure is provided. The structure includes a first gate electrode layer having at least three surfaces surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material. The structure also includes a second gate electrode layer disposed below and in contact with the first gate electrode layer, the second gate electrode layer having at least three surfaces surrounded by a second intermixed layer, wherein the second intermixed layer comprises the first material and a fifth material, wherein the first gate electrode layer and the second gate electrode layer are disposed between two adjacent dielectric spacers.

Semiconductor device having nanosheet transistor and methods of fabrication thereof

A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Integrated circuit including dipole incorporation for threshold voltage tuning in transistors

A method for processing an integrated circuit includes forming N-type and P-type gate all around transistors and core gate all around transistors. The method deposits a first metal gate layer for the P-type transistors and a second metal gate layer for the N-type transistors. The method forms a passivation layer in-situ with the metal gate layer of the P-type transistors.

Integrated circuit with nanosheet transistors with metal gate passivation

A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.

Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer

Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a metal gate strip, gate spacers and a dielectric helmet. The substrate has fins. The metal gate strip is disposed across the fins and has a reversed T-shaped portion between two adjacent fins. The gate spacers are disposed on opposing sidewalls of the metal gate strip. A dielectric helmet is disposed over the metal gate strip.

FinFET devices and methods of forming the same

A device includes a substrate, and a first semiconductor channel over the substrate. The first semiconductor channel includes a first nanosheet of a first semiconductor material, a second nanosheet of a second semiconductor material in physical contact with a topside surface of the first nanosheet, and a third nanosheet of the second semiconductor material in physical contact with an underside surface of the first nanosheet. The first gate structure is over and laterally surrounding the first semiconductor channel, and in physical contact with the second nanosheet and the third nanosheet.

Field effect transistor and method

Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a gate dielectric layer around first channel layers in a p-type gate region and around second channel layers in an n-type gate region. Sacrificial features are formed between the second channel layers in the n-type gate region. A p-type work function layer is formed over the gate dielectric layer in the p-type gate region and the n-type gate region. After removing the p-type work function layer from the n-type gate region, the sacrificial features are removed from between the second channel layers in the n-type gate region. An n-type work function layer is formed over the gate dielectric layer in the n-type gate region. A metal fill layer is formed over the p-type work function layer in the p-type gate region and the n-type work function layer in the n-type gate region.

P-metal gate first gate replacement process for multigate devices

A structure has stacks of semiconductor layers over a substrate and adjacent a dielectric feature. A gate dielectric is formed wrapping around each layer and the dielectric feature. A first layer of first gate electrode material is deposited over the gate dielectric and the dielectric feature. The first layer on the dielectric feature is recessed to a first height below a top surface of the dielectric feature. A second layer of the first gate electrode material is deposited over the first layer. The first gate electrode material in a first region of the substrate is removed to expose a portion of the gate dielectric in the first region, while the first gate electrode material in a second region of the substrate is preserved. A second gate electrode material is deposited over the exposed portion of the gate dielectric and over a remaining portion of the first gate electrode material.

Semiconductor structures and methods thereof

A semiconductor device according to the present disclosure includes a fin structure over a substrate, a vertical stack of silicon nanostructures disposed over the fin structure, an isolation structure disposed around the fin structure, a germanium-containing interfacial layer wrapping around each of the vertical stack of silicon nanostructures, a gate dielectric layer wrapping around the germanium-containing interfacial layer, and a gate electrode layer wrapping around the gate dielectric layer.

Silicon channel tempering

A semiconductor device is provided. The semiconductor device includes a plurality of first semiconductor nanostructures formed over a substrate, and a first S/D structure formed on sidewall surfaces of the first semiconductor nanostructures. The semiconductor device includes a plurality of second semiconductor nanostructures formed over the substrate, and a second S/D structure formed on sidewall surfaces of the second semiconductor nanostructures. The semiconductor device includes an isolation structure formed between the first S/D structure and the second S/D structure, and the isolation structure has a first sidewall surface in direct contact with the first S/D structure and a second sidewall surface in direct contact with the second S/D structure.

Semiconductor device

A semiconductor device structure, along with methods of forming such, are described. The structure includes first and second dielectric features and a first semiconductor layer disposed between the first and second dielectric features. The structure further includes an isolation layer disposed between the first and second dielectric features, and the isolation layer is in contact with the first and second dielectric features. The first semiconductor layer is disposed over the isolation layer. The structure further includes a gate dielectric layer disposed over the isolation layer and a gate electrode layer disposed over the gate dielectric layer. The gate electrode layer has an end extending to a level between a first plane defined by a first surface of the first semiconductor layer and a second plane defined by a second surface opposite the first surface.

Semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first stack structure and a second stack structure in a first area over a substrate, wherein each of the stack structures includes semiconductor layers separated and stacked up; depositing a first interfacial layer around each of the semiconductor layers of the stack structures; depositing a gate dielectric layer around the first interfacial layer; forming a dipole oxide layer around the gate dielectric layer; removing the dipole oxide layer around the gate dielectric layer of the second stack structure; performing an annealing process to form a dipole gate dielectric layer for the first stack structure and a non-dipole gate dielectric layer for the second stack structure; and depositing a first gate electrode around the dipole gate dielectric layer of the first stack structure and the non-dipole gate dielectric layer of the second stack structure.

Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are separated and stacked up, and a thickness of each second semiconductor layer is less than a thickness of each first semiconductor layer; a first interfacial layer around each first semiconductor layer; a second interfacial layer around each second semiconductor layer; a first dipole gate dielectric layer around each first semiconductor layer and over the first interfacial layer; a second dipole gate dielectric layer around each second semiconductor layer and over the second interfacial layer; a first gate electrode around each first semiconductor layer and over the first dipole gate dielectric layer; and a second gate electrode around each second semiconductor layer and over the second dipole gate dielectric layer.

Nanosheet device with dipole dielectric layer and methods of forming the same

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Hsinchu, Taiwan

Mao-Lin Huang