Semiconductor Manufacturing International (shanghai) Corporation

Beijing Bytedance Network Technology Co., Ltd.

Semiconductor Manufacturing International (beijing) Corporation

Abb Schweiz Ag

Abb Technology Ltd

Semiconductor Manufacturing (shanghai) International Corporation

Semiconductor Manufacturing (beijing) Intel Corporation

Mao Li

Xin Zhang

Dae-Sub Jung

Jiaxi Xiahou

Deyan Chen

Zhenli Dai

Lingfeng Li

Zhou Yu

George Q Zhang

Jingsheng Yang

Srinivas Nidamarthi

Dae Sub Jung

Ziyun Qi

Xinguo Fu

De Yan Chen

Shun Huang

Qianhu Zhang

Leong Tee Koh

Ashutosh Srivastava

Tuanwei Wang

Pushuang Xu

Disclosed in the embodiments of the present disclosure are an interaction method and apparatus, and an electronic device. A specific implementation of the method comprises: in response to detecting a trigger operation for a multimedia conference control, sending a multimedia conference start request to a server, wherein the server starts a multimedia conference in response to determining to start the multimedia conference on the basis of the multimedia conference start request; and in response to detecting a confirmation operation for a live broadcast conference confirmation control, sending live broadcast conference confirmation information to the server, wherein a live stream is generated on the basis of a received multimedia conference stream in response to the server receiving the live broadcast conference confirmation information, and in response to receiving the multimedia conference stream, and the multimedia conference stream is sent to the server by a participating subject of the multimedia conference. Thus, provided is a method for generating a live stream on the basis of the multimedia conference stream.

Interaction method and apparatus, and electronic device

A stirring component includes a body arranged in an internal chamber at a side of a circular spline away from a flex spline of the harmonic transmission system. The body includes a coupling hole through which the body is coupled to and rotated with an input shaft of the harmonic transmission system, and at least one stirring recess arranged on a side of the body adjacent to the circular spline and has a varying depth in an axial direction to stir and push lubricant medium within the internal chamber towards the flex spline during rotation of the body. With the stirring component arranged within the internal chamber, the plate-shaped body can block the lubricant medium from moving further. Furthermore, the stirring component can stir and push the lubricant medium away from the body towards the flex spline.

Stirring component for harmonic transmission system and associated harmonic transmission system

Disclosed in the embodiments of the present disclosure are an interaction method and apparatus, and an electronic device. A specific implementation of the method comprises: receiving a multimedia data stream sent by a user participating in a multimedia conference; determining a live multimedia data stream from the multimedia data stream based on a received live instruction of the multimedia conference; and transmitting the live multimedia data stream to a live server, in order that the live server generates a live data stream from the multimedia conference based on the live multimedia data stream.

A method for forming a semiconductor structure includes providing a substrate, including a first region and a second region; forming a plurality of fin structures on the substrate; forming an isolation structure between adjacent fin structures; forming a mask layer over the substrate and the plurality of fin structures; forming an opening by removing a portion of the mask layer formed in the first region; removing a portion of the isolation structure exposed in the opening by using a remaining portion of the mask layer as a mask; removing the remaining portion of the mask layer; and forming a gate structure across the plurality of fin structures. The gate structure covers the first region.

Semiconductor structure and method for forming the same

A semiconductor structure and fabrication method are provided. The method includes: providing a substrate with a first doped region and a second doped region; forming discrete first isolation structures in the second doped region; forming a third doped region in the second doped region between adjacent first isolation structures and under the first isolation structures; forming a gate structure; forming a source region in the first doped region; and forming a drain region in the second doped region. The first doped region includes first doping ions and the second doped region includes second doping ions with a conductivity type opposite to a conductivity type of the first doping ions. The third doped region includes third doping ions with a conductivity type opposite to the conductivity type of the second doping ions. A portion of the first isolation structure is located between the gate structure and the drain region.

Semiconductor structure with isolation structures in doped region and fabrication method thereof

The present disclosure provides an LDMOS device and a manufacturing method thereof. The LDMOS device includes: a substrate, a drift region formed in the substrate; a gate structure, located on the substrate on one side of the drift region, and covering part of the drift region; a drain region, located in the drift region on one side of the gate structure, an isolation structure located on the substrate, the isolation structure located between the drain region and the gate structure; a gate electrode, located on the gate structure and electrically connected with the gate structure; a drain electrode, located on the drain region and electrically connected with the drain region; a block layer, covering the drift region and the isolation structure between the gate electrode and the drain electrode in a shape-preserving manner; and a groove electrode located on the block layer, the groove electrode located between the isolation structure and the gate structure, and at least covering part of the top of the isolation structure. The LDMOS device improves a device breakdown voltage, and cannot increase Rdson.

LDMOS device and manufacturing method thereof

A system includes a robot, comprising a manipulator and a controller, with a gripper mounted on the manipulator, for picking the battery for testing and sorting, a battery holding section for receiving batteries for testing and sorting at predetermined locations in the battery holding section, and a testing section disposed within the working range of the robot, for testing an electrical condition of the battery for testing and sorting, whereby the controller controls the manipulator and the gripper to first-pick the battery for testing and sorting at the predetermined location from the battery holding section and place it to contact the testing section for testing, the testing section tests the battery and sends to the controller a signal indicating the electrical condition of the tested battery, and the controller controls the manipulator and the gripper to second-pick the battery contacting the testing section and sort it according to the signal.

Batteries testing and sorting system and the method thereof

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Shanghai, China

Mao Li