Thin Film Electronics Asa

Ensurge Micropower Asa

Kovio, Inc.

Mao Ito

Arvind Kamath

Aditi Chandra

Shoba Rao

Alex Yan

Richard Van Der Linde

Jonathon Y Simmons

Klaus Kunze

Joerg Rockenberger

Fabio R Zurcher

Brent Ridley

Wenzhuo Guo

Somnath Mukherjee

Scott R Bruner

Anand Deshpande

Laila Francisco

Sambhu Kundu

Paul Butler

Miki Trifunovic

A solid-state battery and a method of making the same are disclosed. The battery includes a base frame or support, first and second exterior contacts on the base frame/support, stacked solid-state battery unit cells, first and second electrical connections, and encapsulation in contact with the base frame/support and covering the solid-state battery unit cells and the electrical connections. Each stacked solid-state battery unit cell is on a metal substrate and has exposed cathode and anode current collectors. The electrical connections respectively electrically connect the exposed cathode and anode current collectors to the first and second exterior contacts. The method includes forming the stacked solid-state battery unit cells on the base frame/support, forming the exterior contacts on the base frame/support, electrically connecting the exposed cathode and anode current collectors to the respective exterior contacts, and encapsulating the solid-state battery unit cells and the electrical connections.

Stacked solid state batteries and methods of making the same

The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

Solid-state battery and method of making the same

A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap.

Printed and/or thin film integrated circuit with integrated antenna, and methods of making and using the same

An electronic device, and methods of manufacturing the same are disclosed. The method of manufacturing the electronic device includes forming a first metal layer on a first substrate, forming an integrated circuit or a discrete electrical component on a second substrate, forming electrical connectors on input and/or output terminals of the integrated circuit or discrete electrical component, forming a second metal layer on the first metal layer, the second metal layer improving adhesion and/or electrical connectivity of the first metal layer to the electrical connectors on the integrated circuit or discrete electrical component, and electrically connecting the electrical connectors to the second metal layer.

Electronic device having a plated antenna and/or trace, and methods of making and using the same

A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

Method of making silane compositions

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Cupertino, CA, United States of America

Mao Ito