Arm Limited

Cerfe Labs, Inc.

Manuj Rathor

Paul Raymond Besser

Lucian Shifren

Glen Arnold Rosendale

Kimberly Gay Reid

Ming He

Jingyan Zhang

Gregory Munson Yeric

Greg Yeric

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.

Correlated electron material (CEM) devices with contact region sidewall insulation

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.

Methods and processes for forming devices from correlated electron material (CEM)

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Fabrication of correlated electron material (CEM) devices

Growing community of inventors

Fremont, CA, United States of America

Manuj Rathor