Vishay Semiconductor Gmbh

Manuel Schmidt

Robert Figueria

A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.

Photosensitive semiconductor component, method for forming a photosensitive semiconductor component

A sensor arrangement, in particular as part of a reflection light barrier, includes a carrier as well as a photodiode, a first light emitting diode for emitting a measuring light beam, and a second light emitting diode for emitting a reference light beam, in particular a reference light beam pulsed offset in time with respect to the measuring light beam, arranged on the carrier, and further includes a light permeable housing enclosing the photodiode and the two light emitting diodes. The second light emitting diode is arranged on the carrier and in the housing such that the reference light emitted by it is essentially not incident on the side of the photodiode but rather is reflected internally in the housing to be incident onto an upper surface of the photodiode.

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Waghaeusel, Germany

Manuel Schmidt