Semikron Elektronik Gmbh &co.kg

Manuel Noderer

Alexander Wehner

Jürgen Steger

Ingo Bogen

A power semiconductor module includes a substrate, having power semiconductor components, further including a housing element, and having a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encased by a plastic element of the flat lead connection device and materially bonded to the plastic element, wherein a connection section of the first flat lead connection element projects from the plastic element, a connection section of the second flat lead connection element is arranged on the plastic element or is at least partly enclosed by the plastic element and bonded to the plastic element so that a section of the plastic element is between the first flat lead connection element and the connection section of the second flat lead connection element.

Power semiconductor module and method for producing a power semiconductor module

A pressing device for indirectly or directly applying pressure to power-semiconductor components of a power-semiconductor module, having a pressing plate, having a pressing nub element which is formed from an elastic material and which has a pressing nub plate and pressing nubs projecting therefrom, and having a receiving device for receiving the pressing nub element, which receiving device has a base plate provided with recesses, wherein the recesses run through the base plate, wherein the pressing nub plate is arranged on the base plate and the pressing nubs run through the recesses and, on the main side of the base plate facing away from the pressing nub plate, project beyond this main side of the base plate, and wherein the pressing nub plate is arranged between the pressing plate and the base plate.

Pressing device for directly or indirectly applying pressure to power-semiconductor components of a power-semiconductor module

A power semiconductor module has a substrate, with power semiconductor components, and a DC voltage connecting device, which has a first and a second flat conductor connecting element and at least one first metal layer connecting element and at least one second metal layer connecting element, wherein the second flat conductor connecting element is arranged spaced apart in the normal direction of the first flat conductor connecting element from the first flat conductor connecting element, the first flat conductor connecting element is electrically connected by the first metal layer connecting element and the second flat conductor connecting element is electrically connected by the second metal layer connecting element to the metal layer, the first flat conductor connecting element has a flat conductor end section and a flat conductor connection section arranged between the one first metal layer connecting element and the flat conductor end section.

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Nuremberg, Germany

Manuel Noderer