Applied Materials, Inc.

Other

Applied Komatsu Technology, Inc.

Manuel J Herrera

Richard Ernest Demaray

David Eric Berkstresser

Chandra V Deshpandey

David F Eline

Akihiro Hosokawa

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10 Torr, and which can function at a continuous operating temperature of about 300&deg; F. (148.9&deg; C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface. A first preferred embodiment comprises an aluminum center reinforcing member having at least one layer of a polymeric insulator applied to provide an insulating, sealing surface. A second preferred embodiment comprises an anodized aluminum center reinforcing member having an inorganic insulator such as silicon oxide, silicon nitride, or aluminum nitride applied to provide the insulating, sealing surface. A third preferred embodiment comprises a graphite, silica or glass fiber-reinforced member having at least one layer of a polymeric insulator applied thereover, to provide an insulating sealing surface. A fourth preferred embodiment comprises a silicon nitride or graphic fiber-reinforced member having an inorganic, non-metallic insulating sealing surface thereover.

Method of forming an electrically insulating sealing structure for use in a semiconductor manufacturing apparatus

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10 Torr, and which can function at a continuous operating temperature of about 300&deg; F. (148.9&deg; C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface.

Electrically insulating sealing structure and its method of use in a semiconductor manufacturing apparatus

Fabrication techniques for an integrated sputtering target assembly include pressure assisted bonding of soldered layers of material, in particular, soldering of the target material to its backing plate; pressure assisted curing of structural adhesives used to join a finned cover plate to a backing plate which between them form passages for fluid cooling; and bonding an electrical insulating layer to the back surface of the backing plate. The pressure to assist in bonding is typically applied by an autoclave. The cooling fluid passages disposed between a cover and a finned backing plate can be sealed by using laser welding or electron beam welding rather than closing the cooling passages with structural adhesives.

Autoclave bonding of sputtering target assembly

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10.sup.-6 Torr, and which can function at a continuous operating temperature of about 300.degree. F. (148.9.degree. C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface. A first preferred embodiment comprises an aluminum center reinforcing member having at least one layer of a polymeric insulator applied to provide an insulating, sealing surface. A second preferred embodiment comprises an anodized aluminum center reinforcing member having an inorganic insulator such as silicon oxide, silicon nitride, or aluminum nitride applied to provide the insulating, sealing surface. A third preferred embodiment comprises a graphite, silica or glass fiber-reinforced member having at least one layer of a polymeric insulator applied thereover, to provide an insulating sealing surface. A fourth preferred embodiment comprises a silicon nitride or graphic fiber-reinforced member having an inorganic, non-metallic insulating sealing surface thereover.

Electrically insulating sealing structure and its method of use in a

A sputtering target assembly is fabricated by diffusion bonding a target material plate to a backing plate. The plates are cleaned in a vacuum environment, and an interlayer is formed on one or more of the plates. The plates are then joined under heat and pressure, before an oxide layer can form on the joining surfaces of the plates. The plates may be sequentially processed through cleaning, interlayer deposition, and bonding chambers, all with vacuum environments, to form the finished part, or, a single chamber may be used to provide the cleaning, interlayer deposition and bonding functions.

Preparation and bonding of workpieces to form sputtering targets and

A target, target backing plate, and cover plate form a target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used. The target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies. The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.

Sputtering device

Sputtering device and target with cover to hold cooling fluid

A target, target backing plate, and cover plate form a target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used.

A target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies. A target, target backing plate, and cover plate form the target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used. The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.

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San Mateo, CA, United States of America

Manuel J Herrera