Freescale Semiconductor,inc.

Nxp Usa, Inc.

Manuel F Romero

Peter H Aaen

Lakshminarayan Viswanathan

David James Dougherty

A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.

Semiconductor package design providing reduced electromagnetic coupling between circuit components

A semiconductor package () includes circuits (). The circuit () includes electrical devices () interconnected by a bondwire array (). Likewise, the circuit () includes electrical devices () interconnected by a bondwire array (). Signal wires () of the bondwire array () are proximate to signal wires () of the bondwire array (). Ground wires () are located on either side of, and close to, bondwire array (). Ground wires () are located on either side of, and close to, bondwire array (). The ground wires () are electrically coupled to a ground region (). The ground wires () reduce a magnetic flux density () via induced return currents () on the ground wires of opposite polarity to signal currents () on the bondwire arrays () to reduce inductive coupling between the adjacent bondwire arrays ().

Growing community of inventors

Chandler, AZ, United States of America

Manuel F Romero