Shipley Company LLC

Other

Manuel doCanto

Edward K Pavelchek

Timothy G Adams

Peter Trefonas, Iii

Roger F Sinta

George G Barclay

Suzanne M Coley

Robert F Blacksmith

James W Thackeray

Anthony Zampini

Charles R Szmanda

Robert H Gore

Gary N Taylor

Rosemary Bell

James Michael Mori

Thomas M Zydowsky

Robert L Brainard

Robin L Miller-Fahey

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Dyed photoresists and methods and articles of manufacture comprising same

Antireflective compositions are provided that contain a basic additive material. Such use of a basic material can significantly decrease or even completely eliminate notching of an overcoated photoresist relief image. Antireflective formulations of the invention are preferably crosslinking compositions and may contain a resin component in addition to the basic additive. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Antireflective coating compositions

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions ('ARCs'), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

Planarizing antireflective coating compositions

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition, particularly for deep UV applications. The antireflective compositions of the invention comprise a photoacid generator that is activated during exposure of an overcoated photoresist. Antireflective compositions of the invention can significantly reduce undesired footing of an overcoated resist relief image.

Antireflective coating compositions comprising photoacid generators

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an M of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.

High conformality antireflective coating compositions

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Antireflective coating compositions and exposure methods under 200 nm

Disclosed are new antireflective compositions including cross-linked polymeric particles including one or more chromophores. Also disclosed are methods of forming relief images using these antireflective compositions.

Antireflective composition

Methods utilizing antireflective coating compositions with exposure under 200 nm

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an M,of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.

A method for making an acrylic resin photoresist characterized by polymerization of an acrylic monomer in a solvent that dissolves all monomers and resultant polymers. The use of the solvent permits formation of acrylic resins suitable for use in the preparation of photoresists without recovery from its reaction mixture. Photoresists prepared from such polymers have improved transparency, especially at exposures of 193 mn or less.

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Stoughton, MA, United States of America

Manuel doCanto