Centre National De La Recherche Scientifique

Thales

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Paris—sud

Université Paris-saclay

Université Grenoble Alpes

Université Paris-sud 11

Manuel Bibes

Vincent Garcia

Julie Grollier

Nicolas Locatelli

Karim Bouzehouane

Agnès Barthelemy

Diogo Castro Vaz

Jean-Philippe Attané

Stéphane Fusil

Laurent Vila

Paul Noël

The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses,

Neuromimetic network and related production method

The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising:

Electronic device, digital port, analog component, and method for generating a voltage

The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization. According to the invention, the ferroelectric element possesses a domain structure, said domains corresponding to regions of the ferroelectric element the polarization of which is oriented one way in a single direction; and when a voltage is applied between the electrodes, the absolute value of the voltage being equal to or higher than the absolute value of what is called a saturation voltage, the ferroelectric element main comprises only a single domain; and when a voltage is applied between the electrodes, the absolute value of the voltage being lower than the absolute value of what is called the saturation voltage, the ferroelectric element comprises a plurality of separate domains, the spatial distribution of said domains and their proportions being controlled by the chosen voltage value.

Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device

A device comprising: an assembly consisting of two, respectively upper and lower thin layers each forming a ferromagnetic element and separated by a thin layer forming a non magnetic element, said assembly being made up so that the layers forming the ferromagnetic elements are magnetically coupled through the layer forming a non magnetic element; an electrode, a layer forming a ferroelectric element in which the polarization may be oriented in several directions by applying an electric voltage through said layer, said layer forming a ferroelectric element being positioned between the layer forming a lower ferromagnetic element and the electrode; said device being configured so as to allow control of the magnetic configuration of the layers forming ferromagnetic elements by the direction of the polarization in the layer forming a ferroelectric element.

Device consisting of various thin films and use of such a device

Growing community of inventors

Palaiseau, France

Manuel Bibes