Qualcomm Incorporated

Manuel Aldrete

Jie Fu

Daeik Daniel Kim

Chin-Kwan Kim

Milind Shah

Jonghae Kim

Changhan Hobie Yun

Mario Francisco Velez

Chengjie Zuo

Omar James Bchir

Houssam Jomaa

Babak Nejati

Daniel Daeik Kim

Bonhoon Koo

Hong Bok We

David Francis Berdy

Yangyang Sun

Christopher Healy

Wen Yin

Wei Wang

Husnu Ahmet Masaracioglu

Yonghao An

Dwayne Richard Shirley

Gopal C Jha

Shu Zhang

Integrated circuit (IC) packages employing a re-distribution layer (RDL) substrate(s) with photosensitive non-polymer dielectric material layers for increased package rigidity, and related fabrication methods. To reduce or minimize warpage of an IC package employing a RDL substrate, the RDLs of the RDL substrate are photosensitive non-polymer dielectric material layers. The photosensitive non-polymer dielectric material layers can exhibit increased rigidity as a result of being hardened when exposed to light and cured during fabrication of the RDL substrate. The photosensitive non-polymer dielectric material layers can also exhibit increased rigidity as a result of being an inorganic polymer (e.g., SiOx, SiN material) that has a higher material modulus for increased stiffness and/or a lower coefficient of thermal expansion (CTE) for reduced thermal contraction and expansion, as opposed to for example, an organic polymer material (e.g., Polyimide) which has less stiffness and a higher CTE.

Integrated circuit (IC) package employing a re-distribution layer (RDL) substrate(s) with photosensitive dielectric layer(s) for increased package rigidity, and related fabrication methods

Disclosed is a package and method of forming the package with a mixed pad size. The package includes a first set of pads having a first size and a first pitch, where the first set of pads are solder mask defined (SMD) pads. The package also includes a second set of pads having a second size and a second pitch, where the second set of pads are non-solder mask defined (NSMD) pads.

Mixed pad size and pad design

An RF/EMI shield has a substrate, a plurality of solder balls on a first side of the substrate, and a plurality of wire-bonds on a periphery of the first side of the substrate to form a shield which can be soldered in a surface mount process directly around components needing shielding. Each of the plurality of wire-bonds has a width selected as a fraction of the wavelength of interest.

Conformal shielding for solder ball array

An exemplary improved ground for a power amplifier circuit may include structural separation of the drive amplifier and the power amplifier grounds and cut-off of the power amplifier induced feedback current to ensure stability under a wide-range of operating conditions. The exemplary power amplifier may include a first ground coupled to a first amplifier circuit, a second ground coupled to a second amplifier circuit separate from the first ground, and the first amplifier circuit generates a drive current for the second amplifier circuit.

Segmented thermal and RF ground

Conventional packages for 5G applications suffer from disadvantages including high mold stress on the die, reduced performance, and increased keep-out zone. To address these and other issues of the conventional packages, it is proposed to pre-apply a wafer-applied material, which remains in place, to form an air cavity between the die and the substrate. The air cavity can enhance the die's performance. Also, since the wafer-applied material can remain in place, the keep-out zone can be reduced. As a result, higher density modules can be fabricated.

Air cavity mold

In exemplary aspects of the disclosure, magnetic coupling problems in a power amplifier/antenna circuit may be address by using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate to offer full RF isolation of both PA output match inductors (self-shielded and embedded) or using a self-shielded RF inductor mounted over the PA output match inductor embedded in the substrate along with a component level conformal shield around the self-shielded inductor on the assembly structure.

Power amplifier with RF structure

Certain aspects of the present disclosure are directed to an integrated circuit (IC) package. The IC package generally includes an IC and a shielding sidewall disposed adjacent to the IC. In certain aspects, the IC comprises a first layer coupled to the shielding sidewall, a second layer comprising a first signal path, and a third layer disposed below the first layer and coupled to the shielding sidewall, wherein the second layer is disposed between the first layer and the third layer. In some cases, the IC also includes a plurality of vias configured to couple the first layer to the third layer, wherein at least a portion of the first signal path is disposed in an inner shielding region that spans from the first layer to the third layer and spans from the shielding sidewall to the plurality of vias.

Waveguide along shielded side wall

A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.

Backside drill embedded die substrate

Some features pertain to a stacked package apparatus that includes a shield at least partially surrounding the apparatus, a first substrate including a plurality of first pads, the plurality of first pads coupled to the shield, and a second substrate, the second substrate over the first substrate and coupled to the first substrate, the second substrate including a plurality of second pads, the plurality of second pads coupled to the shield.

Shielded stacked substrate apparatus and method of fabricating

A semiconductor device according to some examples of the disclosure may include a package substrate, a semiconductor die coupled to one side of the package substrate with a first set of contacts on an active side of the semiconductor die and coupled to a plurality of solder prints with a second set of contacts on a back side of the semiconductor die. The semiconductor die may include a plurality of vias connecting the first set of contacts to the second set of contacts and configured to allow heat to be transferred from the active side of the die to the plurality of solder prints for a shorter heat dissipation path.

Semiconductor assembly and method of making same

An integrated circuit package includes a substrate/interposer assembly having a plurality of conductive contacts and a plurality of conductive posts, such as copper posts, electrically coupled to at least some of the conductive contacts in the substrate/interposer assembly. The conductive posts are surrounded by a protective dielectric, such as a photoimageable dielectric (PID). An integrated circuit die may be disposed on the substrate/interposer assembly within an interior space surrounded by the dielectric. An additional integrated circuit die may be provided in a package-on-package (POP) configuration.

Conductive post protection for integrated circuit packages

Some novel features pertain to an integrated device that includes a substrate, a first via, and a first bump pad. The first via traverses the substrate. The first via has a first via dimension. The first bump pad is on a surface of the substrate. The first bump pad is coupled to the first via. The first bump pad has a first pad dimension that is equal or less then the first via dimension. In some implementations, the integrated device includes a second via and a second bump pad. The second via traverses the substrate. The second via has a second via dimension. The second bump pad is on the surface of the substrate. The second bump pad is coupled to the second via. The second bump pad has a second pad dimension that is equal or less then the second via dimension.

Substrate comprising improved via pad placement in bump area

Improved Molded Laser Package (MLP) Packages which include a relief path for pressure and reduces the risk of shorting adjacent solder balls are provided. The MLP packages may include a gutter integrally connected to one or more through mold vias allowing a path to relieve pressure created when moisture gets entrapped in through mold vias, during the manufacturing process, while also reducing the risk of solder shorts between adjacent solder balls located in the through mold vias. Additionally, MLP packages which include gutters integrally connected to one or more through mold vias may enable tighter bump pitch and thinner packages. As a result, process margins and risks associated with surface mount technology (SMT) may be improved and provide more flexibility on inventory staging.

Through mold via relief gutter on molded laser package (MLP) packages

Some implementations provide a semiconductor device that includes a substrate coupled to a die through a thermal compression bonding process. The semiconductor device also includes a trace coupled to the substrate. The trace includes a first conductive material having a first oxidation property. The trace also includes a first surface layer including a second conductive material having a second oxidation property. The second oxidation property is less susceptible to oxidation than the first oxidation property. The first and second conductive materials are configured to provide an electrical path between the die and the substrate. The first surface layer has a thickness that is 0.3 microns (&#x3bc;m) or less.

Surface finish on trace for a thermal compression flip chip (TCFC)

Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure. The barrier layer includes a top portion, a bottom portion and a side portion. The top portion is coupled to the UBM structure, and the side portion is substantially oxidized.

Growing community of inventors

Encinitas, CA, United States of America

Manuel Aldrete