Lg Chem, Ltd

Manshik Park

Chan Yeup Chung

Jung Min Ko

Ho Rim Lee

Junghwan Kim

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):SiM1ScAl&#x2003;&#x2003;(Formula 1)

Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same

A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al).SiCrVAl&#x2003;&#x2003;[Formula 1]In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

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Daejeon, South Korea

Manshik Park