Asml Netherlands B.v.

Manouk Rijpstra

Ralph Brinkhof

Weitian Kou

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Hakki Ergün Cekli

Edo Maria Hulsebos

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Willem Seine Christian Roelofs

Hadi Yagubizade

Loek Johannes Petrus Verhees

Wendy Johanna Martina Van De Ven

Ahmet Koray Erdamar

Matthijs Cox

Tran Thanh Thuy Vu

Boris Menchtchikov

Sudharshanan Raghunathan

Maaike Van't Westeinde

Wim Tjibbo Tel

Simon Gijsbert Josephus Mathijssen

Kaustuve Bhattacharyya

Sebastianus Adrianus Goorden

Cédric Désiré Grouwstra

Sarathi Roy

Cornelis Johannes Henricus Lambregts

Pieter Gerardus Jacobus Smorenberg

Leendert Jan Karssemeijer

Maaike Van T Westeinde

Chi-Fei Nien

Chang-Wei Chen

Hakki Ergun Cekli

A method for a metrology process, the method includes obtaining first measurement data relating to a first set of measurement conditions and determining a first measurement recipe based on the first measurement data. At least one performance indicator is determined from one or more components of the first measurement data obtained from a component analysis or statistical decomposition. Alternatively, at least one performance indicator is determined from a comparison of one or more first measurement values relating to the first measurement recipe and one or more second measurement values relating to a second measurement recipe, where second measurement recipe is different to the first measurement data and relates a second set of measurement conditions, the second set of measurement conditions being different to the first set of measurement conditions.

Metrology method and associated metrology and lithographic apparatuses

A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

Computational metrology based correction and control

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

Growing community of inventors

Eindhoven, Netherlands

Manouk Rijpstra