Osi Optoelectronics, Inc.

Udt Sensors, Inc.

Osteometer Meditech, Inc.

Manoocher Mansouri Aliabadi

Peter Steven Bui

Narayan Dass Taneja

Neeraj Agrawal

Christian Wulff

Kahn-Tze Andrew Lim

The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.

Wavelength sensitive sensor photodiodes

The present invention relates to a dual energy X-ray apparatus and method for osteoporosis assessment and monitoring. The present invention takes a bone densitometry reading of a patient's wrist to assess osteoporosis and monitor bone loss condition by repeat measurements along with therapy. The bone densitometry system has an X-ray source, dual energy detectors, an arm-rest to place the patient's arm, a motion system to move the source-detector gantry along the patient's forearm, and a computer with a database to archive the wrist image, calculate the bone mineral density, maintain a history of patient information, and generate patient history reports.

Apparatus for bone density assessment and monitoring

The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.

Photodiodes with PN junction on both front and back sides

Growing community of inventors

Studio City, CA, United States of America

Manoocher Mansouri Aliabadi