Other

Intel Corporation

Certichip Inc.

Tiraboschi Services, LLC

Qualcomm Incorporated

Nxp B.v.

Manoj Sachdev

David Rennie

William Wong

Mohammad Sharifkhani

Shah M Jahinuzzaman

Sanu K Mathew

Sudhir K Satpathy

Vikram B Suresh

Jaspal Singh Shah

Sheida Gohardehi

Vivek K De

Ram K Krishnamurthy

Siva G Narendra

Inyup Kang

James W Tschanz

Ali Keshavarzi

Qing Li

Jose De Jesus Pineda De Gyvez

Matthew Levi Severson

Amr M Fahim

Bhaskar P Chatterjee

David James Rennie

Mohamed Elgebaly

Karthikeyan Ethirajan

Nikolaos Papadopoulos

Andrei Pavlov

Siva Narendra

Maofeng Yang

Siva Narenda

Nikolas Papadopoulos

Energy and/or power recycling techniques for use with portable displays in order to extend battery life for portable displays.

Low-power active matrix display with row and/or data driver energy recycling techniques

The disclosure is directed at a CMOS-like logic gate including a set of thin-film transistors (TFTs), the set of TFTs including a subset of pull down TFTs, a subset of diode-connected TFTs and an output pull-up transistor; and a capacitor; wherein the subset of diode-connected TFTs, the output pull-up transistor and the capacitor are positioned to provide a bootstrapped feedback network to provide full-output swing; and wherein the subset of diode-connected TFTs and one of the subset of pull-down TFTs form a leakage current path; and wherein at least one of the subset of pull-down TFTs is connected to a first input.

Method and system for CMOS-like logic gates using TFTs and applications therefor

Physically unclonable functions response in memory cells is improved by transistor sizing, transistor threshold voltage (V) and body bias in the memory cell to improve the reproducibility of the memory cell and multiple Sense Amplifiers (SA) per column to further enhance physically unclonable function entropy. A physically unclonable function exploits a large number of read-sequence-order combinations available in a physically unclonable function memory array to generate an exponentially large challenge-response pair space, without incurring the area and energy costs of hosting and operating an exponentially large memory array.

Method and apparatus to provide memory based physically unclonable functions

An embodiment of a semiconductor package apparatus may include technology to generate a first output from a physically unclonable function (PUF) based on a challenge, modify the challenge based on the first output, and generate a response based on the modified challenge. Some embodiments may additionally or alternatively include technology to change a read sequence of the PUF based on an output of the PUF. Some embodiments may additionally or alternatively include technology to vary a latency of a linear feedback shift register based on an output from the PUF. Other embodiments are disclosed and claimed.

Physically unclonable function with feed-forward addressing and variable latency output

A unipolar inverter circuit for thin-film transistor circuits including: a driving voltage input; an input signal; a base voltage input; a first stage having a first inverter circuit connected between the driving voltage input and the base voltage input and driven by an input signal; a capacitor coupled to the output of the first stage at a node A; and a second stage having: a second inverter circuit having a second stage load transistor and a second stage driving transistor, wherein a gate of the load transistor is connected to the capacitor at a node B; and a clamping transistor connected between the driving voltage and the node B for controlling a voltage, wherein the clamping transistor gate is connected to the driving voltage input; and an output, wherein the capacitor enables charge injection to the gate of the second stage load transistor to allow approximately full voltage swing at the output based on the input signal.

Circuit, system and method for thin-film transistor logic gates

Sense amplifier configurations for memories are described. In these configurations, the differential inputs are boosted proportional to the respective bitline voltage enabling a low-voltage, reliable, faster sense amplifier operation. Disclosed sense amplifiers are also capable of compensating the threshold mismatch between the sensing transistors.

Threshold voltage mismatch compensation sense-amplifiers for static random access memories with multiple differential inputs

A storage cell is provided with improved robustness to soft errors. The storage cell comprises complementary core storage nodes and complementary outer storage nodes. The outer storage nodes act to limit feedback between the core storage nodes and are capable of restoring the logical state of the core storage nodes in the event of a soft error. Similarly the core storage nodes act to limit feedback between the outer storage nodes with the same effect. This cell has advantages compared with other robust storage cells in that there are only two paths between the supply voltage and ground which limits the leakage power. An SRAM cell utilizing the proposed storage cell can be realized with two access transistors configured to selectively couple complementary storage nodes to a corresponding bitline. A flip-flop can be realized with a variety of transfer gates which selectively couple data into the proposed storage cell.

Eight transistor soft error robust storage cell

Provided is an apparatus and method for electrical stability compensation. The apparatus includes a drive transistor connecting a power supply to a load, a first variable capacitor having a gate and a source, and a switch transistor for controlling a connection between a programming signal source and a gate of the drive transistor. The gate of the first variable capacitor is connected to the gate of the drive transistor. The first variable capacitor is configured to draw a charge from the gate of the drive transistor during a driving phase for the load.

Apparatus and method for electrical stability compensation

A sense amplifier for use in a memory array having a plurality of memory cells is provided. The sense amplifier provides low power dissipation, rapid sensing and high yield sensing operation. The inputs to the sense amplifier are the differential bitlines of an SRAM column, which are coupled to the sense amplifier via the sources of two PMOS transistors. A CMOS latching element comprised of two NMOS transistors and the aforementioned PMOS transistors act to amplify any difference between the differential bitline voltages and resolve the output nodes of the sense amplifier to a full swing value. The latching element is gated with two additional PMOS transistors which act to block the latching operation until the sense amplifier is enabled. One or more equalization transistors ensure the latch remains in the metastable state until it is enabled. Once the latch has resolved it consumes no DC power, aside from leakage.

SRAM sense amplifier

An offset cancellation scheme for sense amplification is described. The scheme consists of group of transistors which are selectively coupled to high and low voltage levels via multi-phase timing. This results in a voltage level on sensing nodes of interest which are a function of transistor mismatch. The resulting voltage levels act to compensates for the transistor mismatch, thereby improving the reliability of the sense amplifier in the presence of process non-idealities. The offset cancellation scheme is applicable to numerous types of sense amplifiers, amplifiers, and comparators.

Sense-amplification with offset cancellation for static random access memories

A storage cell is provided with improved robustness to soft errors. The storage cell comprises complementary lower storage nodes and complementary upper storage nodes. The upper storage nodes act to limit feedback between the lower storage nodes and are capable of restoring the logical state of the core storage nodes in the event of a soft error. Similarly the lower storage nodes act to limit feedback between the upper storage nodes with the same effect. An SRAM cell utilizing the proposed storage cell can be realized with two access transistors configured to selectively couple complementary storage nodes to a corresponding bitline. A flip-flop can be realized with a variety of transfer gates which selectively couple data into the proposed storage cell.

Soft error robust storage SRAM cells and flip-flops

A Static Random Access Memory (SRAM) cell without dedicated access transistors is described. The SRAM cell comprises a plurality of transistors configured to provide at least a pair of storage nodes for storing complementary logic values represented by corresponding voltages. The transistors comprise at least one bitline transistor, at least on wordline transistor and at least two supply transistors. The bitline transistor is configured to selectively couple one of the storage nodes to at least one corresponding bitline, the bitline for being shared by SRAM cells in one of a common row or column. The wordline transistor is configured to selectively couple another of the storage nodes to at least one corresponding wordline, the wordline for being shared by SRAM cells in the other of the common row or column. The supply transistors are configured to selectively couple corresponding ones of the storage nodes to a supply voltage.

SRAM cell without dedicated access transistors

A Static Random Access Memory (SRAM) cell storage configuration is described, having an improved robustness to radiation induced soft errors. The SRAM cell storage configuration comprises the following elements. First and second storage nodes are configured to store complementary voltages. Drive transistors are configured to selectively couple one of the first and second storage nodes to ground. Load transistors are configured to selectively couple the other one of the first and second storage nodes to a power supply. At least one stabilizer transistor is configured to provide a corresponding redundant storage node and limit feedback between the first and second storage nodes, the redundant storage node being capable of restoring the first or second storage nodes in case of a soft error.

Growing community of inventors

Waterloo, Canada

Manoj Sachdev