Applied Materials, Inc.

Manoj A Gajendra

Brian T West

Rongping Wang

Jibing Zeng

Mahadev Joshi

Kyle Moran Hanson

Jamie Leighton

Jon Christian Farr

Van H Nguyen

Soundarrajan Jembulingam

Joseph Antony Jonathan

Manoj Balakumar

Kiran Giriyapura

Arvind Thiyagarajan

Arul Vasanth Subramanian

Gagan Dobhal

Chetan Kumar Mylappanahalli Narasingaiah

Sanjay Bhanurao Chavan

A system and method for sequential single-sided CMP processing of opposite facing surfaces of a silicon carbide (SiC) substrate are disclosed. A method includes urging a first surface of a substrate against one of plurality of polishing pads, wherein the plurality of polishing pads are disposed on corresponding ones of a plurality of rotatable polishing platens. The method includes transferring, using the first side of the end effector, the substrate from the substrate carrier loading station to a substrate alignment station. The method includes transferring, using the first side of the end effector, the substrate from the substrate alignment station to a substrate carrier loading station. The method includes urging a second surface of the substrate against one of the plurality of polishing platens.

Substrate handling systems and methods for CMP processing

A heat exchanger for abating compounds produced in semiconductor processes is presented. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

Heat exchanger with multistaged cooling

A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

Automated dry-in dry-out dual side polishing of silicon substrates with integrated spin rinse dry and metrology

Methods and apparatus for removing substrate contamination are provided herein. In some embodiments, a multi-chamber processing apparatus includes: a processing chamber for processing a substrate; a factory interface (FI) coupled to the processing chamber via a load lock chamber disposed therebetween; and a cleaning chamber coupled to the FI and configured to rinse and to dry the substrate, wherein the cleaning chamber includes a chamber body defining an interior volume and having a first opening at an interface with the FI for transferring the substrate into and out of the interior volume.

Methods and apparatus for cleaning a substrate after processing

A heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

Embodiments described herein relate to a heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a heat exchanging surface within the heat exchanger. The heat exchanging surface can be a curved shaped which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller foot print and reducing costs.

Apparatus with multistaged cooling

Embodiments of the disclosure include an electrostatic chuck assembly, a processing chamber and a method of maintaining a temperature of a substrate is provided. In one embodiment, an electrostatic chuck assembly is provided that includes an electrostatic chuck, a cooling plate and a gas box. The cooling plate includes a gas channel formed therein. The gas box is operable to control a flow of cooling gas through the gas channel.

Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel

A chemical mechanical polishing head includes a base assembly that includes at least one component formed of a composite plastic having a tensile modulus approximately equal to or greater than aluminum, a retaining ring secured to the base assembly, and a flexible membrane secured to the base assembly to form a pressurizable chamber between the base assembly and an upper surface of the flexible membrane. A lower surface of the flexible membrane provides a substrate mounting surface.

Carrier head with composite plastic portions

Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

Apparatus for treating a gas in a conduit

Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

A substrate position aligner includes a substrate holding assembly, a plurality of rollers, a rotation mechanism, and a sensor. The substrate holding assembly is configured to hold a substrate in a vertical orientation. The plurality of rollers include at least two idler rollers and a drive roller. Each roller has a point on its perimeter spaced on a common radius from a center of substrate rotation defined within the substrate holding assembly. The sensor is positioned approximately on the common radius and configured to detect the presence of an orientation cut in the substrate when the orientation cut is not orientated within a range between about &#x2212;44 degrees and about +44 degrees from horizontal. A method of aligning a substrate having an orientation cut includes sensing a presence of the orientation cut when the orientation cut is not orientated within the above recited range.

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Bengaluru, India

Manoj A Gajendra