Yonsei University

Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Mann Ho Cho

Hyun Eok Shin

Byung Soo So

Ju Hyun Lee

Hyeon Sik Kim

Kwang Sik Jeong

Hye Jin Choi

Tae Hyeon Kim

Han Bum Park

Ji Min Chae

Gi Hyeon Kwon

Ju Heyuck Baeck

A method of fabricating a semiconductor device includes forming a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material, forming a sacrificial layer on the semiconductor layer, forming a metal contact layer on the sacrificial layer, and removing the sacrificial layer. After the sacrificial layer is removed, the semiconductor layer and the metal contact layer are bonded to each other through a van der Waals bond.

Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method

A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Stacked structure including semiconductor structure and method of manufacturing the same

Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.

Thermoelectric material, method of fabricating the same, and thermoelectric device

A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbSematerial layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbSematerial layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.

Variable resistive memory device and method of fabricating the same

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Seoul, South Korea

Mann Ho Cho