Avago Technologies General IP (singapore) Pte. Ltd.

Lsi Corporation

Manish Trivedi

Ankur Goel

Setti Shanmukheswara Rao

Manish Umedlal Patel

A circuit generates low-skew true and complement output signals from an input signal using an inverter, true signal generation circuitry, and complement signal generation circuitry. The inverter operates between a high-voltage reference source (VDD) and a low-voltage reference source (VSS) and inverts the input signal to generate a delayed complement input signal. The true signal generation circuitry, which comprises a p-type transistor in series with an n-type transistor, (i) operates between (a) one of VDD and VSS and (b) one of the true input signal and the complement input signal and (ii) generates a true output signal. The complement signal generation circuitry, which also comprises p-type transistor in series with an n-type transistor, (i) operates between (a) one of VDD and VSS and (b) one of the true input signal and the complement input signal and (ii) generates a complement output signal.

Concurrent true and complement signal generation

A memory device includes a memory array comprising memory cells, sense amplifiers configured to sense data stored in the memory cells of the memory array, and control circuitry configured to generate a plurality of separate sense amplifier control signals for application to respective control inputs of respective ones of the sense amplifiers. For example, the memory device may comprise a row of dummy memory cells each coupled to a dummy wordline. In such an arrangement, the control circuitry may comprise a plurality of logic gates coupled to respective ones of the dummy memory cells, with each such logic gate configured to generate a corresponding one of the separate sense amplifier control signals for a corresponding one of the sense amplifiers as a function of a data transition at a bitline of the corresponding dummy memory cell. The separate sense amplifier control signals may comprise respective sense amplifier enable signals.

Memory device with separately controlled sense amplifiers

A memory device includes a memory array comprising a plurality of memory cells, a plurality of sense amplifiers configured to sense data stored in the memory cells of the memory array, a dummy wordline coupled to respective enable inputs of the sense amplifiers, a dummy wordline return, a dummy bitline, a dummy sense amplifier having an input coupled to the dummy bitline, and control circuitry coupled to the output of the dummy sense amplifier and the dummy wordline return. The control circuitry has a first configuration for generating a reset signal based at least in part on a signal at the output of the dummy sense amplifier in a read mode of operation, and has a second configuration different than the first configuration for generating the reset signal based at least in part on a signal on the dummy wordline return in a write mode of operation.

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Ghaziabad, India

Manish Trivedi