Applied Materials, Inc.

Other

Applied Material, Inc.

Manish Hemkar

Satheesh Kuppurao

David K Carlson

Randhir P Thakur

Schubert S Chu

Nyi O Myo

Kaushal Kishore Singh

Errol C Sanchez

Andrew C Lam

Richard Omar Collins

Howard Beckford

Zhiyuan Ye

Kartik Bhupendra Shah

Paul Brillhart

Yihwan Kim

Shu-Kwan Danny Lau

Lori D Washington

Anzhong Chang

Zhepeng Cong

Martin A Hilkene

Brian Hayes Burrows

Kin Pong Lo

Edric Tong

Karthik Ramanathan

Kevin Joseph Bautista

Nitin Pathak

Herman Diniz

Anhthu Ngo

Vinh Tran

A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Multi-thermal CVD chambers with shared gas delivery and exhaust system

Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Susceptor design to reduce edge thermal peak

Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Apparatus to control semiconductor film deposition characteristics

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

Method of removing contaminants and native oxides from a substrate surface

Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.

Method to control semiconductor film deposition characteristics

A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750&#xb0; C., and typically at a temperature from about 700&#xb0; C. to about 500&#xb0; C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

Low temperature epitaxial growth of silicon-containing films using UV radiation

Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation

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Sunnyvale, CA, United States of America

Manish Hemkar