Sandisk 3d LLC

Sandisk Corporation

Matrix Semiconductor, Inc.

Manish Bhatia

James Montague Cleeves

N Johan Knall

Michael A Vyvoda

David Russell Friedman

Melissa H Selcher

The preferred embodiments described herein provide a method for field-programming a solid-state memory device with a digital media file. In one preferred embodiment, a solid-state memory device is provided that comprises a memory array comprising a plurality of field-programmable memory cells. A digital media file is selected for storage in the memory device, and a digital media source field-programs the memory cells of the memory device with the selected digital media file. After the digital media file is stored in the memory device, the stored digital media file can be played using a digital playback device. In some embodiments, the memory array is a three-dimensional memory array, and the memory cells are write-once memory cells. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another.

Method for field-programming a solid-state memory device with a digital media file

A method of forming an active device is provided. The method includes performing a first patterning operation on a first plurality of layers. This first patterning operation defines a first feature of the active device. Then, a second patterning operation can be performed on at least one layer of the first plurality of layers. This second patterning operation defines a second feature of the active device. Of importance, the first and second patterning operations are performed substantially back-to-back, thereby ensuring that the active device can accurately function.

Electrically isolated pillars in active devices

A monolithic three dimensional memory array is described. The memory array comprises a first set of strips including a first terminal; a second set of strips including a second terminal; a third set of strips including a third terminal; a first pillar having at least one side wall with a slightly positive slope, said pillar disposed between and connecting said first and second sets of strips, and including a first P doped silicon region, a first N doped silicon region and a first insulating region; a second pillar having at least one side wall with a slightly positive slope, said pillar disposed between and connecting said second and third sets of strips, and including a second P doped silicon region, a second N doped silicon region and a second insulating region; wherein each of the pillars is substantially free of stringers.

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Sunnyvale, CA, United States of America

Manish Bhatia