Micron Technology Incorporated

Waferscale Integration, Inc.

Manik Advani

Tomoko Ogura Iwasaki

Samir Mittal

Violante Moschiano

Michele Piccardi

Ramin Ghodsi

Steven Moyer

Reza Kazerounian

Nabeel Meeramohideen Mohamed

Tyler L Betz

Cuong Trinh

Yui Shimizu

Manu Agarwal

A memory device includes a content addressable memory (CAM) block storing a plurality of stored search keys. The memory device further includes control logic that determines a first number of memory cells in at least one string of the CAM block storing one of the plurality of stored search keys, the first number of memory cells storing a first logical value, and stores a calculated parity value representing the first number of memory cells in a page cache associated with the CAM block. The control logic further reads stored parity data from one or more memory cells in the at least one string, the one or more memory cells connected to one or more additional wordlines in the CAM block, and compares the calculated parity value to the stored parity data to determine whether an error is present in the one of the plurality of stored search keys in the CAM block.

Health scan for content addressable memory

A memory system includes a memory device comprising a content addressable memory (CAM) block storing a plurality of stored search keys. The memory system further includes a processing device that receives an input search key and identifies, from the plurality of stored search keys in the CAM block, multiple redundant copies of a stored search key that match the input search key. The processing device further determining whether a number of the multiple redundant copies of the stored search key that match the input search key satisfies a threshold criterion. Responsive to the number of the multiple redundant copies of the stored search key that match the input search key satisfying the threshold criterion, the processing device determines a match result for the input search key.

Redundancy and majority voting in a key-value data storage system using content addressable memory

A memory system includes a memory device comprising a programming buffer and a content addressable memory (CAM) block. The memory system further includes a processing device that receives a plurality of data entries to be stored at the memory device and stores the plurality of data entries in a plurality of pages of the programming buffer, each of the plurality of pages of the programming buffer comprising a respective subset of the plurality of data entries. The processing device further initiates a conversion operation to copy the plurality of data entries from the programming buffer to the CAM block. The conversion operation includes reading respective portions of each data entry in each respective subset of the plurality of data entries from the plurality of pages of the programming buffer, and writing the respective portions to respective CAM pages of the CAM block.

Programming content addressable memory

An access request is received. The access request comprises a physical page address corresponding to a primary memory block of a memory device, an input security key, and a logical page address corresponding to the physical page address. The input security key is provided as input to a (CAM) block that stores a plurality of security keys to verify that the input security key matches a stored security key. A location of the stored security key is checked to verify that it corresponds to the logical page address included in the access request based a predetermined mapping. Based on verifying that the stored security key corresponds to the logical page address included in the access request, the physical page address corresponding to the primary memory block is accessed.

Memory device data security based on content-addressable memory architecture

A memory system includes a memory device comprising a content addressable memory (CAM) block storing a plurality of stored search keys and a value data block. The memory system further includes a processing device that receives an input search key and identifies one of the plurality of stored search keys that matches the input search key, the one of the plurality of stored search keys having an associated match location in the CAM block. The processing device further determines, using the associated match location, a corresponding value location in the value data block and retrieves, from the value location in the value data block, data representing a value associated with the input search key.

Key-value data storage system using content addressable memory

A memory device including a memory die including an internally-powered thermometer to determine a first measured operating temperature value of the memory die; detect the first measured operating temperature value satisfies one of a first condition or a second condition; and generate a first signal indicating an out-of-range operating temperature of the memory die in response to one of the first condition or the second condition being satisfied by the first measured operating temperature value. The memory die also including an externally-powered thermometer to: determine a second measured operating temperature value of the memory die; detect the second measured operating temperature value satisfies one of the first condition or the second condition; and generate a second signal indicating the out-of-range operating temperature of the memory die in response to one of the first condition or the second condition being satisfied by the second measured operating temperature value.

Memory device with detection of out-of-range operating temperature

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.

Architecture for fast content addressable memory search

A memory system includes a memory device comprising a content addressable memory (CAM) block comprising a plurality of key tables each storing a respective plurality of stored search keys. The memory system further includes a processing device that receives, from a requestor, an input search key and an indication of one of the plurality of key tables and identifies a match between the input search key and one of the plurality of stored search keys in the one of the plurality of key tables. The one of the plurality of stored search keys has an associated offset value indicating a location in a sorted string table (SSTable) corresponding to the one of the plurality of key tables. The processing device further reads the offset value from the one of the plurality of key tables and returns, to the requestor, the offset value read from the one of the plurality of key tables. The requestor can retrieve, from the location in the SSTable, data representing a value associated with the input search key.

Key storage for sorted string tables using content addressable memory

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a representation of the input search word and a representation of an inverse of the input search word. The search pattern is provided as input to search lines of a ternary content-addressable memory (TCAM) block. A subset of the search lines is set to a logical high state based on a first portion of the input search word being designated as don't-care bits. The search pattern causes at least one string in the CAM block to be conductive and provide a signal in response to a data entry stored on the string comprising a second portion of the input search word that excludes the don't-care bits. A location of the data entry is determined and output.

Architecture for ternary content-addressable memory search

A programmable sense amplifier delay (PSAD) circuit that is matched to the response of the memory array due to temperature and voltage supply Vcc. The circuit includes an inverter, a pull-up transistor, a pull-down transistor of the type of the cells of the memory array and a plurality of capacitors. The inverter responds to a predetermined voltage drop between the voltage level of the voltage source and the voltage on the input line. The pull-up transistor is connected between the voltage source Vcc and the input line and is activatable during a pre-charge phase of the memory array to raise the voltage level of the input line towards the voltage source. The pull-down transistor is connected between the input line and a ground source and is activatable after the pre-charge phase to discharge the voltage level of the input line. The capacitors are selectively connected in parallel to the pull-down transistor and define the speed at which the pull-down transistor discharges the input line. The invention also incorporates the voltage drop inverter.

Programmable sense amplifier delay (PSAD) circuit which is matched to

A row decoder for controlling a plurality of selectable word-lines has one control line per block of N word-lines, K select lines, at least one disable line and one word-line driver per word-line. Each control line is activatable during a charge period and during an initial portion of a discharge period. Each select line is selectably high during the charge period. The disable line is active during the discharge period. Each driver includes an access transistor and a discharge transistor. The access transistor is located at one end of its word-line and the discharge transistor is connected at the other end. The access transistor is controlled by one control line and is connected between one select line and the word-line. The discharge transistor is controlled by one disable signal and is connected between the word-line and a ground supply.

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Fremont, CA, United States of America

Manik Advani