Seoul National University

Manick Ha

Cheol Seong Hwang

Disclosed is a method of forming a chalcogenide-based thin film using an atomic layer deposition (ALD) process including forming a Ge—Te-based material, the forming of the Ge—Te-based material may include a first operation of supplying, into a reaction chamber provided with a substrate, a first source gas including a Ge precursor with Ge having an oxidation state of +2, a second operation of supplying a first purge gas into the reaction chamber, a third operation of supplying, into the reaction chamber, a second source gas including a Te precursor and a first co-reactant gas for promoting a reaction between the Ge precursor and the Te precursor, and a fourth operation of supplying a second purge gas into the reaction chamber.

Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

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Gyeonggi-do, South Korea

Manick Ha