Globalwafers Co., Ltd.

Manhsuan Lin

Jia-Zhe Liu

Yen Lun Huang

Wen-Ching Hsu

Chih-Yuan Chuang

Che Ming Liu

Yao-Chung Chang

Chia-Wen Ko

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Buffer layer structure to improve gan semiconductors

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x&#x2264;1 and y&#x2265;0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Buffer layer structure to improve GaN semiconductors

A heterostructure includes a substrate; an intermediate layer disposed on the substrate; and a group III-V layer having a first primary surface disposed on the intermediate layer and a dopant concentration that varies in a manner including a plurality of ramps with at least one of increasing dopant concentration and decreasing dopant concentration, along the growth direction from the first primary surface throughout the layer's thickness before terminating in a second primary surface.

Semiconductor heterostructures and methods for forming same

A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer.

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Hsinchu, Taiwan

Manhsuan Lin