Chartered Semiconductor Manufacturing Ltd (corporation)

Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

Manh Anh Do

Kiat Seng Yeo

Kok Wai Johnny Chew

Hai Peng Tan

Jian Guo Ma

Lap Chan

Johnny Kok Wai Chew

Suh Fei Lim

Kok Wai Chew

Chee Chong Lim

Jianguo Ma

Chirn Chye Boon

Kok Lim Chan

Kiat-Seng Yeo

Ping Qiu

Hai Yeng Tan

Hai Peng Ian

Jiangud Ma

Jiang Guo Ma

Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

Transformer with effective high turn ratio

An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.

Tunable high quality factor inductor

An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90&#xb0; in a lateral direction.

Integrated transformer and method of fabrication thereof

A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

High performance RF inductors and transformers using bonding technique

A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

Integrated helix coil inductor on silicon

A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.

Integrated vertical spiral inductor on semiconductor material

In this invention a single additional capacitor is added to a tuned cascode LNA which boosts the circuit Q and the gain of the amplifier. The added capacitor creates a negative real part of the impedance which when combined with the impedance of the LC tank circuit improves both the Q and the gain of the amplifier. The capacitor does not dissipate any power, and being a passive device the capacitor does not add additional noise to the circuit. With an improved gain there is a much improved signal to noise ratio. The higher Q allows the amplifier to provide some additional bandpass and reduce image reduction requirements in subsequent amplifier stages.

Technique to generate negative conductance in CMOS tuned cascode RF amplifiers

Growing community of inventors

Singapore, Singapore

Manh Anh Do