Samsung Electronics Co., Ltd.

Mangeun Cho

Jinyoung Kim

Changhwa Kim

Doowon Kwon

Sang-Su Park

Ho-chul Ji

Kwansik Kim

Kwansik Cho

Seokjin Kwon

Jameyung Kim

Yoonkyoung Kim

Hyungi Hong

In Ho Ro

Sungki Min

An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

Image sensor

A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

Method of fabricating image sensor

Growing community of inventors

Suwon-si, South Korea

Mangeun Cho