Robert Boschgmbh

Manfred Uebele

Ning Qu

Hartmut Michel

Rainer Topp

Anton Mindl

Horst Meinders

Bernd Bireckoven

Ulrich Nelle

Peter Brauchle

A monolithically integrated output stage includes an arrangement for detecting the load current through a power switching transistor and/or an arrangement for detecting the output voltage at a power switching transistor and/or an arrangement for detecting the chip temperature. A switching logic of the monolithically integrated output stage includes at least one output transistor for switching the output transistor on reaching at least one predetermined load current threshold and/or output voltage threshold and/or temperature threshold, where the output transistor supplies a high signal at at least one logic output. The emitter of the output transistor is coupled to the logic output, and a switching device is provided to block the output transistor at a negative collector voltage of the power switching transistor.

Monolithically integrated output stage

A circuit arrangement of an ignition output stage, in particular for an ignition circuit of a motor vehicle, is described. The circuit arrangement includes a multiple Darlington transistor (Darlington) which drives a primary winding of an ignition coil, as well as a driving circuit for the Darlington. An n-p-n Darlington is provided, whose collector is connected to the positive terminal of a voltage source and whose emitter is connected to a first terminal of the primary winding of the ignition coil. The second terminal of the primary winding is connected to ground. The Darlington is driven via a decoupling element which isolates the driving circuit from a negative reverse voltage present at the base of the Darlington when the latter is turned off.

Circuit arrangement for an ignition stage, in particular for the ignition circuit of a motor vehicle

Gating circuit having current measuring and regulating elements and a

A monolithically integrated MOS output-stage component, particularly a DMOS output stage, includes an output-stage element having a GATE connection, a SOURCE connection, and a DRAIN connection, and also includes an excess-temperature protection device. An integrated GATE-protection resistor is provided. The excess-temperature protection device is also integrated in the output-stage component and includes a series connection of a Zener-diode with a temperature-dependent resistor having a positive temperature coefficient. The resistor is coupled with the SOURCE connection while the Zener-diode is coupled with an outer GATE connection. The series connection is provided with a supply voltage. Furthermore, the excess-temperature protection device contains a semiconductor arrangement controlled by a control voltage at the tap node of the series connection. The semiconductor arrangement reduces the GATE voltage upon the occurrence of excess temperatures. In this way, an evaluation signal having a high total slope with respect to temperature is obtained with only slight requirements for the temperature-dependent resistor. Tank leakage currents are compensated for. The output-stage component is completely integratable in a simple manner and, thus, can be manufactured at favorable cost.

Monolithically integrated mos output-stage component having an

A monolithically integrated power output stage detects the load current through an output-stage transistor. Switch logic coupled to an output transistor is for switching the output transistor when a predetermined load-current threshold is reached. In this connection, the output transistor is integrated in a separate insulated .pi.-well which contains, in addition, a diode which couples the .pi.-region of the .pi.-well to a ground terminal. This limits the maximum potential to a forward voltage of more than 0 volts and thereby prevents malfunction in normal operation since it leads shift currents in low-resistance to ground by capacitive coupling upon an increase in the voltage of the collector of the output-stage transistor.

Monolithically integrated power output stage

Monolithically integrated MOS output-stage component with

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Reutlingen, Germany

Manfred Uebele