Licentia Patent-verwaltungs Gmbh

Syntec Gesellschaft Fur Chemie Und Technologie Der Informationsaufzeichnu

Manfred Lutz

Bernd Reimer

Karl-Heinz Kassel

Hubert Walsdorfer

Josef Stuke

Hans-Hermann Beschoner

Roland Ackermann

Gunnar Suchaneck

Andreas M Richter

Sabine Dreihofer

Alfred Kottwitz

Klaus Schade

Jens-Peter Monch

Hans-Josef Humpert

Process for producing electrophotographically active

An improved electrophotographic recording material of the type comprising an electrically conductive substrate having a blocking layer composed of an amorphous material including silicon atoms, hydrogen atoms and carbon atoms disposed on the substrate, and a photoconductive layer of hydrogenated amorphous silicon disposed on the blocking layer. The photoconductive layer includes carbon atoms, the blocking layer and the photoconductive layer are doped with an element of Group III of the Periodic Table of Elements, and the ratio of the carbon percentage to the percentage of the element of Group III of the Periodic Table of Elements is the same in the blocking layer and in the photoconductive layer.

Electrophotographic recording material

An electrophotographic recording material comprises a dual photoconductive layer applied to an electrically conductive substrate. The lower layer disposed on the substrate is made of an amorphous system of selenium and arsenic containing 18 to 37 percent by weight arsenic. The layer thereabove is made of As.sub.2-x Bi.sub.x Se.sub.3 or As.sub.2 Se.sub.3-y Te.sub.y. The recording material is highly sensitive in the visible spectral range as well as in the IR range and can therefore also be used for recordings with solid state laser diode radiation. In cyclic operation, the material exhibits only slight fatigue.

Layered electrophotographic recording material containing selenium,

An electrophotographic recording material, composed of an electrically conductive substrate; a first layer provided on the electrically conductive substrate and composed of an amorphous selenium-tellurium alloy containing form 0.05 to 15 weight % tellurium; a second layer disposed on the first layer and composed of an amorphous selenium-tellurium alloy containing from 15 to 60 weight % tellurium; and a third layer provided on the second layer and composed of an amorphous alloy of selenium and from 0.05 to 5 weight % of one arsenic or tellurium. The electrophotographic recording material is particularly useful in an electrophotographic recording system which includes an infrared radiation means, such as an infrared solid state laser.

An electrophotographic recording material including a photoconductor made of a selenium compound applied as a layer on an electrically conductive substrate. The photoconductor includes a compound of arsenic, selenium and tellurium of the formula As.sub.2 Se.sub.3-x Te.sub.x, where 0&lt;x&lt;3.

Electrophotographic recording material comprises arsenic, selenium and

An electrophotographic image carrier structure comprises an electrically conductive substrate, a selenium-containing photoconductive layer including more than 35% by weight arsenic, a polyvinyl carbazole covering layer and an intermediate amorphous selenium layer which is situated between the covering layer and the photoconductive layer and which has an arsenic content of zero to less than 0.5% by weight.

Electrophotographic image carrier structure

An electrophotographic recording material including a dual photoconductive layer containing selenium applied to an electrically conductive substrate. The dual photoconductive layer includes a layer of arsenic selenide applied to the substrate, and a layer of an arsenic-selenium-tellurium compound superposed on the arsenic selenide layer. The arsenic-selenium-tellurium compound has the formula As.sub.2 Se.sub.3-x Te.sub.x, where 0&lt;X&lt;3.

Electrophotographic recording material with As.sub.2 Se.sub.3-x Te.sub.x

In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.

Method for producing an electrophotographic recording material having

In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.

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Warstein, Germany

Manfred Lutz