Globalfoundries Inc.

Maha-aip Gmbh & Co. Kg

Manfred Heinz

Andy C Wei

Ralf Richter

Jens Heinrich

Anton Knestel

Frank Seliger

Andreas Ott

Johannes F Groschopf

Thomas Becherer

Katja Steffen

In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors

Growing community of inventors

Dresden, Germany

Manfred Heinz