Globalfoundries Inc.

Manfred Heinz

Andy C Wei

Ralf Richter

Jens Heinrich

Frank Seliger

Andreas Ott

Johannes F Groschopf

Katja Steffen

In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors

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Dresden, Germany

Manfred Heinz